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HGTD1N120BNS9A
HGTD1N120BNS9A
598-HGTD1N120BNS9A
TO-252-3, DPak (2 Leads + Tab), SC-63
HGTD1N120BNS9A datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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HGTD1N120BNS9A Description
Non-Punch Through (NPT) IGBTs are used in the HGTD1N120BNS9A devices. They are members of the MOS gated high voltage switching IGBT family for the first time. IGBTs are a hybrid of MOSFETs and bipolar transistors that combine the best of both worlds. This device has a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss.
HGTD1N120BNS9A Features
? 1200V, 5.3A, TC = 25oC
? SOA Switching Capability of 1200V
?At Tj = 150°C, the typical E°ff is 120pJ.
?Rating for short circuits
?Low Loss of Conduction
?Avalanche-Resistant
?Thermal Impedance SPICE Model with Temperature Compensation SABERTM Model
HGTD1N120BNS9A Applications
Switching applications
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HGTD1N120BNS9A
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