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HGTG11N120CND
HGTG11N120CND
598-HGTG11N120CND
TO-247-3
HGTG11N120CND datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW
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HGTG11N120CND Description
The HGTG11N120CND is an NPT (Non-Punch Through) IGBT. The MOS gate high voltage switching IGBT family has a new member. IGBTs combine the greatest qualities of MOSFETs and bipolar transistors into a single device. This HGTG11N120CND has a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. The IGBT used is the TA49291 development type. The development type TA49189 diode was employed. Many high-voltage switching applications with moderate frequencies and low conduction losses, such as AC and DC motor controllers, power supplies, and drivers for solenoids, relays, and contactors, benefit from the IGBT. Previously known as Developmental Type TA49303.
HGTG11N120CND Features
43 A, 1200 V, TC = 25°C
1200 V Switching SOA Capability
Typical Fall Time: 340 ns at TJ = 150°C
Short Circuit Rating
Low Conduction Loss
Thermal Impedance SPICE Model
This is Pb?Free Device
HGTG11N120CND Applications
Power Management
Industrial
DC-DC Conversion
Switch application
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HGTG11N120CND
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