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HGTG18N120BND
HGTG18N120BND
598-HGTG18N120BND
TO-247-3
HGTG18N120BND datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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HGTG18N120BND Description
The HGTG18N120BND is an IGBT with a Non-Punch Through (NPT) design. The MOS gate high voltage switching IGBT family has a new member. IGBTs are a hybrid of MOSFETs and bipolar transistors that combine the best of both worlds. This device possesses a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Many high-voltage switching applications with moderate frequencies and low conduction losses, such as AC and DC motor controllers, power supplies, and drivers for solenoids, relays, and contactors, benefit from the IGBT. HGTG18N120BND applications include UPS and other industries.
HGTG18N120BND Features
Short Circuit Rating
Low Conduction Loss
This Device is Pb?Free
26 A, 1200 V, TC = 110°C
Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A
Typical Fall Time . . . . . . . . . . . . . 140 ns at TJ = 150°C
HGTG18N120BND Applications
UPS
Other industries
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HGTG18N120BND
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