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IPD088N06N3GBTMA1
IPD088N06N3GBTMA1
376-IPD088N06N3GBTMA1
TO-252-3, DPak (2 Leads + Tab), SC-63
IPD088N06N3GBTMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW
In Stock : 999
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Product Details
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IPD088N06N3GBTMA1 Description
IPD088N06N3GBTMA1 is an OptiMOSTM3 Power-Transistor. The transistor IPD088N06N3GBTMA1 can be applied in Communications equipment, Broadband fixed line access, Industrial, Motor drives, Enterprise systems, and Enterprise projectors applications. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor IPD088N06N3GBTMA1 in the PG-TO252-3 package with 71W Power dissipations.
IPD088N06N3GBTMA1 Features
Ideal for high-frequency switching and sync. rec.
Optimized technology for DCIDC converters
Excellent gate charge x R Ds/(on) product (FOM)
Very low on-resistance Ros(on)
N-channel, normal level
100% avalanche tested
Pb-free plating; RoHS compliant
Qualified according to JEDEC for target applications
IPD088N06N3GBTMA1 Applications
Communications equipment
Broadband fixed line access
Industrial
Motor drives
Enterprise systems
Enterprise projectors
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IPD088N06N3GBTMA1
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