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IPD65R660CFDBTMA1
IPD65R660CFDBTMA1
376-IPD65R660CFDBTMA1
TO-252-3, DPak (2 Leads + Tab), SC-63
IPD65R660CFDBTMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW
In Stock : 999
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Product Details
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IPD65R660CFDBTMA1 Overview
The maximum input capacitance of this device is 615pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As shown in the table below, the drain current of this device is 6A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 40 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.With its 650V power supply, it is capable of handling a dual voltage maximum.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPD65R660CFDBTMA1 Features
a continuous drain current (ID) of 6A
the turn-off delay time is 40 ns
IPD65R660CFDBTMA1 Applications
There are a lot of Infineon Technologies IPD65R660CFDBTMA1 applications of single MOSFETs transistors.
- LCD/LED/ PDP TV Lighting
- Consumer Appliances
- Lighting
- Motor control
- Server power supplies
- LCD/LED TV
- Uninterruptible Power Supply
- AC-DC Power Supply
- Industrial Power Supplies
- Lighting, Server, Telecom and UPS.
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IPD65R660CFDBTMA1
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