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IPP037N06L3GXKSA1
IPP037N06L3GXKSA1
376-IPP037N06L3GXKSA1
TO-220-3
IPP037N06L3GXKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW
In Stock : 999
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IPP037N06L3GXKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 165 mJ.A device's maximal input capacitance is 13000pF @ 30V, which is defined as the capacitance between its input terminals with either input grounded.Its continuous drain current is 90A for this device. Drain current refers to the capacity of the device to conduct continuous current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 25 ns.In addition to 60V, it supports dual voltages up to the maximum.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
IPP037N06L3GXKSA1 Features
the avalanche energy rating (Eas) is 165 mJ
a continuous drain current (ID) of 90A
IPP037N06L3GXKSA1 Applications
There are a lot of Infineon Technologies IPP037N06L3GXKSA1 applications of single MOSFETs transistors.
- Lighting, Server, Telecom and UPS.
- Load switching
- Motor control
- Industrial Power Supplies
- Lighting
- Battery Protection Circuit
- Motor Drives and Uninterruptible Power Supples
- DC-to-DC converters
- PFC stages, hard switching PWM stages and resonant switching
- Micro Solar Inverter
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IPP037N06L3GXKSA1
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