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IRF1405ZSPBF

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Manufacturer No:

IRF1405ZSPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRF1405ZSPBF

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Datasheet:

IRF1405ZSPBF

Description:

MOSFET (Metal Oxide) N-Channel Tube 4.9m Ω @ 75A, 10V ±20V 4780pF @ 25V 180nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Quantity:

In Stock : 999

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Product Details

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IRF1405ZSPBF Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 420 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4780pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=55V, the drain-source breakdown voltage is 55V.It is [48 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.In terms of pulsed drain current, it has a maximum of 600A, which is its maximum rated peak drain current.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 18 ns seconds.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.Using drive voltage (10V) reduces this device's overall power consumption.

IRF1405ZSPBF Features


the avalanche energy rating (Eas) is 420 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 48 ns
based on its rated peak drain current 600A.
a threshold voltage of 4V

IRF1405ZSPBF Applications


There are a lot of Infineon Technologies IRF1405ZSPBF applications of single MOSFETs transistors.

  • Load switching
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • DC-to-DC converters
  • Consumer Appliances
  • Solar Inverter
  • Power Management Functions
  • Battery Protection Circuit
  • DC/DC converters
  • Telecom 1 Sever Power Supplies
  • Server power supplies
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRF1405ZSPBF

technical specifications, attributes, parameters and parts with similar specifications to IRF1405ZSPBF.

  • Type
    Parameter
    Select All
  • Gate Charge (Qg) (Max) @ Vgs

    180nC @ 10V

  • Rise Time

    110ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    82 ns

  • Turn-Off Delay Time

    48 ns

  • Continuous Drain Current (ID)

    75A

  • Threshold Voltage

    4V

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    55V

  • Pulsed Drain Current-Max (IDM)

    600A

  • Avalanche Energy Rating (Eas)

    420 mJ

  • Nominal Vgs

    4 V

  • Height

    4.826mm

  • Length

    10.668mm

  • Width

    9.65mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tube

  • Published

    2003

  • Series

    HEXFET®

  • JESD-609 Code

    e3

  • Part Status

    Discontinued

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Resistance

    4.9MOhm

  • Terminal Finish

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Additional Feature

    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Time@Peak Reflow Temperature-Max (s)

    30

  • JESD-30 Code

    R-PSSO-G2

  • Number of Elements

    1

  • Power Dissipation-Max

    230W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    230W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    18 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    4.9m Ω @ 75A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    4780pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    75A Tc

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