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IRF3710STRLPBF
IRF3710STRLPBF
376-IRF3710STRLPBF
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3710STRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW
In Stock : 999
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IRF3710STRLPBF MOSFET Description
Advanced processing techniques create extraordinarily low on-resistance per silicon area in the IRF3710 57A 100V N-Channel Power MOSFET. This advantage, when paired with the high switching speed and ruggedized device architecture of HEXFET power MOSFETs, offers the designer a very efficient and dependable device for usage in many applications. At power dissipation levels of up to 50 watts, the TO-220 package is universally recommended for all commercial-industrial applications. The TO-220's low heat resistance and packaging cost contribute to its widespread use in the industry.
IRF3710STRLPBF MOSFET Features
Fast Switching
175°C Operating Temperature
Fully Avalanche Rated
Dynamic dv/dt Rating
Ultra-Low On-Resistance
Lead-Free
IRF3710STRLPBF MOSFET Applications
Low-profile applications
Chopper Circuits
Tone Control
Audio Signals Modulation
Switching Application
Low Noise Applications
Noise Generators
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IRF3710STRLPBF
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