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IRF540NSTRRPBF
IRF540NSTRRPBF
376-IRF540NSTRRPBF
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 44m Ω @ 16A, 10V ±20V 1960pF @ 25V 71nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
In Stock : 999
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Product Details
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IRF540NSTRRPBF Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 185 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1960pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 33A.There is a peak drain current of 110A, its maximum pulsed drain current.A normal operation of the DS requires keeping the breakdown voltage above 100V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF540NSTRRPBF Features
the avalanche energy rating (Eas) is 185 mJ
based on its rated peak drain current 110A.
a 100V drain to source voltage (Vdss)
IRF540NSTRRPBF Applications
There are a lot of Infineon Technologies IRF540NSTRRPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Synchronous Rectification
- Uninterruptible Power Supply
- DC/DC converters
- DC-to-DC converters
- LCD/LED/ PDP TV Lighting
- Lighting
- Motor drives and Uninterruptible Power Supplies
- Telecom 1 Sever Power Supplies
- LCD/LED TV
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IRF540NSTRRPBF
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