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IRFP044NPBF

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Manufacturer No:

IRFP044NPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRFP044NPBF

Package:

TO-247-3

Datasheet:

IRFP044NPBF

Description:

IRFP044NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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IRFP044NPBF Description


IRFP044NPBF belongs to the family of HEXFET? power MOSFET that is designed based on the advanced processing techniques realize extremely low on-resistance per silicon area. Moreover, the IRFP044NPBF is well known for its fast switching speed and ruggedized device design. All of these make it be more efficient and reliable and be used in a wide range of applications.


IRFP044NPBF Features


Fast switching
Advanced processing techniques
Low on-resistance per silicon area
Available in the TO-247 package for commercial-industrial applications


IRFP044NPBF Applications


Power supplies
DC-DC converters
Motor controllers
Consumer electronics
Automotive electronics
Transportation technology
Radio frequency (RF) applications
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRFP044NPBF

technical specifications, attributes, parameters and parts with similar specifications to IRFP044NPBF.

  • Type
    Parameter
    Select All
  • Fall Time (Typ)

    52 ns

  • Turn-Off Delay Time

    43 ns

  • Continuous Drain Current (ID)

    53A

  • Threshold Voltage

    4V

  • JEDEC-95 Code

    TO-247AC

  • Gate to Source Voltage (Vgs)

    20V

  • Drain Current-Max (Abs) (ID)

    49A

  • Drain-source On Resistance-Max

    0.02Ohm

  • Drain to Source Breakdown Voltage

    55V

  • Dual Supply Voltage

    55V

  • Recovery Time

    110 ns

  • Nominal Vgs

    4 V

  • Height

    20.7mm

  • Length

    15.87mm

  • Width

    5.3086mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Factory Lead Time

    10 Weeks

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-247-3

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Bulk

  • Published

    1997

  • Series

    HEXFET®

  • JESD-609 Code

    e3

  • Part Status

    Not For New Designs

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Additional Feature

    AVALANCHE RATED, HIGH RELIABILITY

  • Subcategory

    FET General Purpose Power

  • Voltage - Rated DC

    55V

  • Technology

    MOSFET (Metal Oxide)

  • Peak Reflow Temperature (Cel)

    250

  • Current Rating

    53A

  • Time@Peak Reflow Temperature-Max (s)

    30

  • Lead Pitch

    5.45mm

  • Number of Elements

    1

  • Number of Channels

    1

  • Power Dissipation-Max

    120W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    100W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    12 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    20m Ω @ 29A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1500pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    53A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    61nC @ 10V

  • Rise Time

    80ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

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