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IRFP9140NPBF

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Manufacturer No:

IRFP9140NPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRFP9140NPBF

Package:

TO-247-3

Datasheet:

IRFP9140NPBF

Description:

MOSFET (Metal Oxide) P-Channel Bulk 117m Ω @ 13A, 10V ±20V 1300pF @ 25V 97nC @ 10V 100V TO-247-3

Quantity:

In Stock : 999

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Product Details

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IRFP9140NPBF Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1300pF @ 25V.The drain current is the maximum continuous current the device can conduct, and this device has -23A continuous drain current (ID).Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-100V, and this device has a drain-to-source breakdown voltage of -100V voltage.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 51 ns.A maximum pulsed drain current of 76A is the maximum peak drain current rated for this device.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is -4V.This transistor requires a drain-source voltage (Vdss) of 100V.Its overall power consumption can be reduced by using drive voltage (10V).

IRFP9140NPBF Features


a continuous drain current (ID) of -23A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 76A.
a threshold voltage of -4V
a 100V drain to source voltage (Vdss)

IRFP9140NPBF Applications


There are a lot of Infineon Technologies IRFP9140NPBF applications of single MOSFETs transistors.

  • Lighting, Server, Telecom and UPS.
  • Motor control
  • Battery Protection Circuit
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • DC/DC converters
  • General Purpose Interfacing Switch
  • Synchronous Rectification
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
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EmailEmail for receiving inquiries: jindawei@hkjdwchip.com

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

4. Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.
The following are some common countries' logistic time.

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From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
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From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRFP9140NPBF

technical specifications, attributes, parameters and parts with similar specifications to IRFP9140NPBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    12 Weeks

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-247-3

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Bulk

  • Published

    1998

  • Series

    HEXFET®

  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • Termination

    Through Hole

  • ECCN Code

    EAR99

  • Resistance

    117mOhm

  • Terminal Finish

    MATTE TIN OVER NICKEL

  • Additional Feature

    AVALANCHE RATED, HIGH RELIABILITY

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    -100V

  • Technology

    MOSFET (Metal Oxide)

  • Peak Reflow Temperature (Cel)

    250

  • Current Rating

    -23A

  • Time@Peak Reflow Temperature-Max (s)

    30

  • Number of Elements

    1

  • Power Dissipation-Max

    140W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    120W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    15 ns

  • FET Type

    P-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    117m Ω @ 13A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1300pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    23A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    97nC @ 10V

  • Rise Time

    67ns

  • Drain to Source Voltage (Vdss)

    100V

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Turn-Off Delay Time

    51 ns

  • Continuous Drain Current (ID)

    -23A

  • Threshold Voltage

    -4V

  • JEDEC-95 Code

    TO-247AC

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    -100V

  • Pulsed Drain Current-Max (IDM)

    76A

  • Dual Supply Voltage

    -100V

  • Recovery Time

    220 ns

  • Nominal Vgs

    -4 V

  • Height

    20.3mm

  • Length

    15.875mm

  • Width

    5.3mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Contains Lead, Lead Free

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