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  • IRGR4045DPBF

IRGR4045DPBF

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Manufacturer No:

IRGR4045DPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRGR4045DPBF

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Datasheet:

IRGR4045DPBF

Description:

IRGR4045DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRGR4045DPBF

technical specifications, attributes, parameters and parts with similar specifications to IRGR4045DPBF.

  • Type
    Parameter
    Select All
  • Length

    6.73mm

  • Width

    2.39mm

  • Radiation Hardening

    No

  • RoHS Status

    RoHS Compliant

  • Lead Free

    Lead Free

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-252-3, DPak (2 Leads + Tab), SC-63

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tube

  • Published

    2012

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Subcategory

    Insulated Gate BIP Transistors

  • Max Power Dissipation

    77W

  • Terminal Form

    GULL WING

  • Base Part Number

    IRGR4045

  • JESD-30 Code

    R-PSSO-G2

  • Number of Elements

    1

  • Rise Time-Max

    15ns

  • Element Configuration

    Single

  • Power Dissipation

    39W

  • Case Connection

    COLLECTOR

  • Input Type

    Standard

  • Turn On Delay Time

    27 ns

  • Power - Max

    77W

  • Transistor Application

    POWER CONTROL

  • Polarity/Channel Type

    N-CHANNEL

  • Turn-Off Delay Time

    17 ns

  • Collector Emitter Voltage (VCEO)

    2V

  • Max Collector Current

    12A

  • Reverse Recovery Time

    74 ns

  • JEDEC-95 Code

    TO-252AA

  • Collector Emitter Breakdown Voltage

    600V

  • Collector Emitter Saturation Voltage

    2V

  • Turn On Time

    38 ns

  • Test Condition

    400V, 6A, 47 Ω, 15V

  • Vce(on) (Max) @ Vge, Ic

    2V @ 15V, 6A

  • Turn Off Time-Nom (toff)

    127 ns

  • IGBT Type

    Trench

  • Gate Charge

    19.5nC

  • Current - Collector Pulsed (Icm)

    18A

  • Td (on/off) @ 25°C

    27ns/75ns

  • Switching Energy

    56μJ (on), 122μJ (off)

  • Gate-Emitter Voltage-Max

    20V

  • Gate-Emitter Thr Voltage-Max

    6.5V

  • Fall Time-Max (tf)

    22ns

  • Height

    6.22mm

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