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  • NDP7060

NDP7060

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Manufacturer No:

NDP7060

Manufacturer:

ON Semiconductor

HK JDW NO:

598-NDP7060

Package:

TO-220-3

Datasheet:

NDP7060

Description:

NDP7060 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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NDP7060 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 550 mJ.A device's maximal input capacitance is 3600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 75A. At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.It is [54 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Its maximum pulsed drain current is 225A, which is also its maximum rating peak drainage current.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 17 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 2.8V.Its overall power consumption can be reduced by using drive voltage (10V).


NDP7060 Features


  • the avalanche energy rating (Eas) is 550 mJ

  • a continuous drain current (ID) of 75A

  • a drain-to-source breakdown voltage of 60V voltage

  • the turn-off delay time is 54 ns

  • based on its rated peak drain current 225A.

  • a threshold voltage of 2.8V



NDP7060 Applications


There are a lot of ON Semiconductor NDP7060 applications of single MOSFETs transistors.

  • DC/DC converters

  • LCD/LED/ PDP TV Lighting

  • Motor Drives and Uninterruptible Power Supples

  • LCD/LED TV

  • Consumer Appliances

  • Server power supplies

  • Industrial Power Supplies

  • Synchronous Rectification

  • Motor control

  • Synchronous Rectification for ATX 1 Server I Telecom PSU

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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

NDP7060

technical specifications, attributes, parameters and parts with similar specifications to NDP7060.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    9 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 3 days ago)

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3

  • Number of Pins

    3

  • Weight

    1.8g

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -65°C~175°C TJ

  • Packaging

    Tube

  • Published

    1998

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Resistance

    13mOhm

  • Terminal Finish

    Tin (Sn)

  • Subcategory

    FET General Purpose Power

  • Voltage - Rated DC

    60V

  • Technology

    MOSFET (Metal Oxide)

  • Current Rating

    75A

  • Number of Elements

    1

  • Power Dissipation-Max

    150W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    150W

  • Turn On Delay Time

    17 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    13m Ω @ 40A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    3600pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    75A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    115nC @ 10V

  • Rise Time

    128ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    90 ns

  • Turn-Off Delay Time

    54 ns

  • Continuous Drain Current (ID)

    75A

  • Threshold Voltage

    2.8V

  • JEDEC-95 Code

    TO-220AB

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    60V

  • Pulsed Drain Current-Max (IDM)

    225A

  • Avalanche Energy Rating (Eas)

    550 mJ

  • Nominal Vgs

    2.8 V

  • Height

    16.3mm

  • Length

    10.67mm

  • Width

    4.7mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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