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  • NTMS5P02R2G

NTMS5P02R2G

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Manufacturer No:

NTMS5P02R2G

Manufacturer:

ON Semiconductor

HK JDW NO:

598-NTMS5P02R2G

Package:

8-SOIC (0.154, 3.90mm Width)

Datasheet:

NTMS5P02R2G

Description:

NTMS5P02R2G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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NTMS5P02R2G Description


NTMS5P02R2G is a -20V Single P-Channel Enhancement?Mode Power MOSFET. The onsemi NTMS5P02R2G can be applied in Power Management in Portable and Battery?Powered Products, i.e: Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET NTMS5P02R2G is in the SOIC-8 package with 2.5W power dissipation. 



NTMS5P02R2G Features


  • High Density Power MOSFET with Ultra-Low RDS(on)

  • Providing Higher Efficiency

  • Miniature SOIC?8 Surface Mount Package ? Saves Board Space

  • Diode Exhibits High Speed with Soft Recovery

  • IDSS Specified at Elevated Temperature

  • Drain?to?Source Avalanche Energy Specified

  • Mounting Information for the SOIC?8 Package is Provided



NTMS5P02R2G Applications


  • Power Management in Portable and Battery-Powered Products

  • Computers

  • Printers

  • PCMCIA Cards

  • Cellular & Cordless Telephones


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

NTMS5P02R2G

technical specifications, attributes, parameters and parts with similar specifications to NTMS5P02R2G.

  • Type
    Parameter
    Select All
  • Current - Continuous Drain (Id) @ 25°C

    3.95A Ta

  • Gate Charge (Qg) (Max) @ Vgs

    35nC @ 4.5V

  • Rise Time

    25ns

  • Drain to Source Voltage (Vdss)

    20V

  • Drive Voltage (Max Rds On,Min Rds On)

    2.5V 4.5V

  • Vgs (Max)

    ±10V

  • Fall Time (Typ)

    55 ns

  • Turn-Off Delay Time

    70 ns

  • Continuous Drain Current (ID)

    5.4A

  • Gate to Source Voltage (Vgs)

    10V

  • Drain Current-Max (Abs) (ID)

    3.95A

  • Drain to Source Breakdown Voltage

    -20V

  • Nominal Vgs

    -900 mV

  • Height

    1.5mm

  • Length

    5mm

  • Width

    4mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Factory Lead Time

    38 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 1 day ago)

  • Mounting Type

    Surface Mount

  • Package / Case

    8-SOIC (0.154, 3.90mm Width)

  • Surface Mount

    YES

  • Number of Pins

    8

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2006

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    8

  • ECCN Code

    EAR99

  • Resistance

    26MOhm

  • Terminal Finish

    Tin (Sn)

  • Additional Feature

    AVALANCHE RATED

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    -20V

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Current Rating

    -5.4A

  • Time@Peak Reflow Temperature-Max (s)

    40

  • Pin Count

    8

  • Number of Elements

    1

  • Power Dissipation-Max

    790mW Ta

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    2.5W

  • Turn On Delay Time

    22 ns

  • FET Type

    P-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    33m Ω @ 5.4A, 4.5V

  • Vgs(th) (Max) @ Id

    1.25V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1900pF @ 16V

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