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NVC6S5A354PLZT1G
NVC6S5A354PLZT1G
598-NVC6S5A354PLZT1G
SOT-23-6 Thin, TSOT-23-6
NVC6S5A354PLZT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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NVC6S5A354PLZT1G Description
NVC6S5A354PLZT1G is a type of P-channel MOSFET developed by ON Semiconductor. It is specifically designed based on trench technology to maintain low on-resistance and low gate charge. When operating, it is able to provide high ESD protection. The NVC6S5A354PLZT1G MOSFET offers the optimum performance for applications requiring low on-resistance and low gate charge, such as high side load switch, reverse battery protection, and so on.
NVC6S5A354PLZT1G Features
Trench technology
Low on-resistance
Low gate charge
Package: CPH
NVC6S5A354PLZT1G Applications
High side load switch
Reverse battery protection
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NVC6S5A354PLZT1G
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