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SS9014CBU
SS9014CBU
598-SS9014CBU
TO-226-3, TO-92-3 (TO-226AA)
SS9014CBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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SS9014CBU Overview
This device has a DC current gain of 200 @ 1mA 5V, which is the ratio between the collector current and the base current.With a collector emitter saturation voltage of 140mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 5V can achieve high levels of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 100mA for this device.In the part, the transition frequency is 270MHz.In extreme cases, the collector current can be as low as 100mA volts.
SS9014CBU Features
the DC current gain for this device is 200 @ 1mA 5V
a collector emitter saturation voltage of 140mV
the vce saturation(Max) is 300mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 270MHz
SS9014CBU Applications
There are a lot of ON Semiconductor SS9014CBU applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
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SS9014CBU
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