Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Max Breakdown Voltage | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Drain to Source Voltage (Vdss) | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RJH60F3DPQ-A0#T0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | 150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | RJH60F | 3 | 178.5W | 178.5W | 90 ns | 40A | 600V | 1.82V | 1.82V @ 15V, 20A | Trench | 400V, 30A, 5 Ω, 15V | 44ns/65ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FGA6560WDF | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2016 | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-3P-3, SC-65-3 | Through Hole | 6.401g | -55°C~175°C TJ | Standard | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 306W | 306W | 110 ns | 120A | 650V | 2.3V | 2.3V @ 15V, 60A | Trench Field Stop | 400V, 60A, 6 Ω, 15V | 84nC | 180A | 25.6ns/71ns | 2.46mJ (on), 520μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
RJH60F5BDPQ-A0#T0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2012 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-247-3 | Through Hole | 150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | RJH60F | 3 | Insulated Gate BIP Transistors | 260.4W | 260.4W | 1 | COLLECTOR | N-CHANNEL | Single | 25 ns | 80A | 600V | 600V | POWER CONTROL | SILICON | 87 ns | 1.8V @ 15V, 40A | 163 ns | Trench | 8V | 400V, 30A, 5 Ω, 15V | 53ns/95ns | |||||||||||||||||||||||||||||||||||||||||||||
 |
AOTF10B60D | Alpha & Omega Semiconductor Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Through Hole | Tube | 2009 | Alpha IGBT™ | Active | 1 (Unlimited) | ROHS3 Compliant | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 42W | 42W | N-CHANNEL | 105 ns | 20A | 600V | 1.8V | 1.8V @ 15V, 10A | 20V | 400V, 10A, 30 Ω, 15V | 17.4nC | 40A | 10ns/72ns | 260μJ (on), 70μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RGTH80TS65DGC11 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Through Hole | Tube | 2014 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-247-3 | Unknown | Through Hole | 38.000013g | -40°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 234W | 234W | 1 | N-CHANNEL | Single | 58 ns | 70A | 650V | 650V | POWER CONTROL | SILICON | 1.6V | 84 ns | 2.1V @ 15V, 40A | 194 ns | Trench Field Stop | 40A | 400V, 40A, 10 Ω, 15V | 79nC | 160A | 34ns/120ns | ||||||||||||||||||||||||||||||||||||||||||||
 |
IKW15N120T2FKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tube | 2006 | TrenchStop® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 235W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | COLLECTOR | N-CHANNEL | 300ns | POWER CONTROL | SILICON | 61 ns | 2.2V @ 15V, 15A | 626 ns | Trench | 1200V | 30A | 600V, 15A, 41.8 Ω, 15V | 93nC | 60A | 32ns/362ns | 2.05mJ | |||||||||||||||||||||||||||||||||||||||||
 |
IXXX200N65B4 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2014 | GenX4™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | unknown | Through Hole | -55°C~175°C TJ | Standard | e3 | Matte Tin (Sn) | Insulated Gate BIP Transistors | 1.15kW | 1150W | N-CHANNEL | Single | 1.15kW | 370A | 650V | 1.7V | 1.7V @ 15V, 160A | PT | 20V | 6.5V | 400V, 100A, 1 Ω, 15V | 553nC | 1000A | 62ns/245ns | 4.4mJ (on), 2.2mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IKQ40N120CH3XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tube | 2014 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 500W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | POWER CONTROL | SILICON | 76 ns | 2.35V @ 15V, 40A | 444 ns | 1200V | 80A | 400V, 40A, 12 Ω, 15V | 190nC | 160A | 30ns/300ns | 3.3mJ (on), 1.3mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
|
IHW30N120R5XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | TrenchStop™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | 330W | 1.85V @ 15V, 30A | Trench Field Stop | 1200V | 60A | 600V, 30A, 10 Ω, 15V | 235nC | 90A | -/330ns | 1.1mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXGX120N60B3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | NOT SPECIFIED | NOT SPECIFIED | IXG*120N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 780W | 1 | COLLECTOR | N-CHANNEL | Single | 780W | 280A | 600V | 1.8V | POWER CONTROL | SILICON | 1.5V | 123 ns | 1.8V @ 15V, 100A | 520 ns | PT | 20V | 5V | 480V, 100A, 2 Ω, 15V | 465nC | 600A | 40ns/227ns | 2.9mJ (on), 3.5mJ (off) | ||||||||||||||||||||||||||||||||||||
 |
FGL40N120ANDTU | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | ACTIVE (Last Updated: 6 days ago) | Through Hole | Tube | 2008 | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 20mm | ROHS3 Compliant | Lead Free | Tin | 64A | No | 3 | TO-264-3, TO-264AA | 29mm | 5mm | Through Hole | 6.756g | -55°C~150°C TJ | 1.2kV | Standard | 8541.29.00.95 | e3 | 500W | 1 | N-CHANNEL | Single | 500W | 15 ns | 112 ns | 64A | 1.2kV | 1.2kV | 150°C | POWER CONTROL | 110 ns | SILICON | 20ns | 3.15V | 45 ns | 3.2V @ 15V, 40A | 165 ns | NPT | 1200V | 64A | 600V, 40A, 5 Ω, 15V | 220nC | 160A | 15ns/110ns | 2.3mJ (on), 1.1mJ (off) | ||||||||||||||||||||||||||||||
 |
IRG4BC40W-STRRP | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | Last Time Buy | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | No | 3 | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 260.39037mg | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | Insulated Gate BIP Transistors | 160W | 160W | 1 | COLLECTOR | N-CHANNEL | Single | 40A | 600V | 2.5V | POWER CONTROL | SILICON | 48 ns | 2.5V @ 15V, 20A | 294 ns | 20V | 6V | 110ns | 480V, 20A, 10 Ω, 15V | 98nC | 160A | 27ns/100ns | 110μJ (on), 230μJ (off) | ||||||||||||||||||||||||||||||||||||||
 |
IRG4PC40FD | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | 2000 | Obsolete | 1 (Unlimited) | 3 | Non-RoHS Compliant | ULTRA FAST SOFT RECOVERY | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | Not Qualified | 160W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AC | COLLECTOR | N-CHANNEL | 42ns | POWER CONTROL | SILICON | 96 ns | 1.7V @ 15V, 27A | 670 ns | 600V | 49A | 480V, 27A, 10 Ω, 15V | 100nC | 200A | 63ns/230ns | 950μJ (on), 2.01mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
NGTB30N135IHRWG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | ACTIVE (Last Updated: 1 day ago) | Tube | 2012 | yes | Active | 1 (Unlimited) | EAR99 | 16.25mm | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | No SVHC | 21.4mm | 5.3mm | Through Hole | 6.500007g | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | Insulated Gate BIP Transistors | 394W | 394W | Halogen Free | N-CHANNEL | Single | 60A | 1.35kV | 1.35kV | 2.3V | 2.65V @ 15V, 30A | Trench Field Stop | 20V | 1350V | 6.5V | 600V, 30A, 10 Ω, 15V | 234nC | 120A | -/250ns | 850μJ (off) | ||||||||||||||||||||||||||||||||||||||
 |
IGC20T60TEX7SA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Active | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGH48N60B3D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | Through Hole | Tube | 2008 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*48N60 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 300W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 300W | 100ns | 280A | 600V | 600V | POWER CONTROL | SILICON | 1.8V | 44 ns | 1.8V @ 15V, 32A | 347 ns | PT | 20V | 5V | 200ns | 480V, 30A, 5 Ω, 15V | 115nC | 22ns/130ns | 840μJ (on), 660μJ (off) | |||||||||||||||||||||||||||||||||
 |
STGP7NC60HD | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | ACTIVE (Last Updated: 8 months ago) | Through Hole | Tube | PowerMESH™ | Active | 1 (Unlimited) | 3 | EAR99 | 10.4mm | ROHS3 Compliant | Lead Free | 14A | No | 3 | TO-220-3 | No SVHC | 9.15mm | 4.6mm | Through Hole | 2.299997g | -55°C~150°C TJ | 600V | Standard | e3 | Tin (Sn) | STGP7 | 3 | Insulated Gate BIP Transistors | 80W | 1 | TO-220AB | N-CHANNEL | Single | 80W | 18.5 ns | 37ns | 25A | 600V | 600V | 14A | POWER CONTROL | 72 ns | SILICON | 7ns | 600V | 2.5V | 25.5 ns | 2.5V @ 15V, 7A | 221 ns | 20V | 14A | 5.75V | 390V, 7A, 10 Ω, 15V | 35nC | 50A | 18.5ns/72ns | 95μJ (on), 115μJ (off) | ||||||||||||||||||||||||||
|
RGT20TM65DGC9 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 25W | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | N-CHANNEL | 42ns | POWER CONTROL | SILICON | 31 ns | 2.1V @ 15V, 10A | 174 ns | Trench Field Stop | 650V | 10A | 400V, 10A, 10 Ω, 15V | 22nC | 30A | 12ns/32ns | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXGX82N120B3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 24 Weeks | Through Hole | Tube | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | 150°C | Insulated Gate BIP Transistors | Not Qualified | 1.25kW | 1250W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 230A | 1.2kV | 3.2V | POWER CONTROL | SILICON | 112 ns | 3.2V @ 15V, 82A | 760 ns | PT | 20V | 1200V | 5V | 180ns | 600V, 80A, 2 Ω, 15V | 350nC | 500A | 30ns/210ns | 5mJ (on), 3.3mJ (off) | ||||||||||||||||||||||||||||||||||||||
 |
IXGR32N60CD1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2004 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 247 | ISOPLUS247™ | Through Hole | 5.3g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*32N60 | 3 | R-PSIP-T3 | Insulated Gate BIP Transistors | Not Qualified | 140W | 140W | 1 | ISOLATED | N-CHANNEL | Single | 25 ns | 45A | 600V | 600V | POWER CONTROL | SILICON | 2.1V | 50 ns | 2.7V @ 15V, 32A | 210 ns | 20V | 5V | 480V, 32A, 4.7 Ω, 15V | 110nC | 120A | 25ns/85ns | 320μJ (off) | |||||||||||||||||||||||||||||||||||||
|
IXGH28N60BD1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2003 | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*28N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 150W | 150W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 25 ns | 40A | 600V | 600V | POWER CONTROL | SILICON | 40 ns | 2V @ 15V, 28A | 800 ns | 20V | 5.5V | 400ns | 480V, 28A, 10 Ω, 15V | 68nC | 80A | 15ns/175ns | 2mJ (off) | ||||||||||||||||||||||||||||||||||||||||
|
IRG7PH42UD1MPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2013 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | No | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 313W | 313W | N-CHANNEL | Single | 85A | 1.2kV | 2V | 1.7V | 2V @ 15V, 30A | Trench | 1200V | 6V | 600V, 30A, 10 Ω, 15V | 270nC | 200A | -/270ns | 1.21mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
STGB10NB37LZT4 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel (TR) | PowerMESH™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10.4mm | ROHS3 Compliant | Lead Free | 20A | No | 3 | VOLTAGE CLAMPING | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.6mm | 9.35mm | Surface Mount | -65°C~175°C TJ | Standard | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | 30 | STGB10 | 3 | R-PSSO-G2 | Insulated Gate BIP Transistors | 125W | 1 | COLLECTOR | N-CHANNEL | Single | 125W | 440V | 20A | 440V | 440V | AUTOMOTIVE IGNITION | SILICON | 340ns | 860 ns | 1.8V @ 4.5V, 10A | 17800 ns | 2.4V | 328V, 10A, 1k Ω, 5V | 28nC | 40A | 1.3μs/8μs | 2.4mJ (on), 5mJ (off) | |||||||||||||||||||||||||||||||
 |
IGW30N60TPXKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2006 | TrenchStop™ | yes | Active | Not Applicable | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 200W | 200W | 1 | SINGLE | N-CHANNEL | 53A | 600V | 1.8V | POWER CONTROL | SILICON | 38 ns | 1.8V @ 15V, 30A | 279 ns | Trench Field Stop | 400V, 30A, 10.5 Ω, 15V | 130nC | 90A | 15ns/179ns | 710μJ (on), 420μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
 |
AOK20B135D1 | Alpha & Omega Semiconductor Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Through Hole | Tube | 2011 | Alpha IGBT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | unknown | Through Hole | -55°C~175°C TJ | Standard | 340W | 340W | 40A | 1.35kV | 1.8V | 1.8V @ 15V, 20A | 1350V | 600V, 20A, 15 Ω, 15V | 66nC | 80A | -/156ns | 1.05mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IKQ40N120CT2XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tube | 2014 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 500W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | POWER CONTROL | SILICON | 74 ns | 2.15V @ 15V, 40A | 530 ns | Trench Field Stop | 1200V | 80A | 600V, 40A, 12 Ω, 15V | 190nC | 160A | 32ns/328ns | 3.1mJ (on), 2.9mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
|
AIGB30N65F5ATMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 39 Weeks | Active | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | Standard | NPT | 650V | 30A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IKQ75N120CH3XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tube | 2014 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 938W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | POWER CONTROL | SILICON | 81 ns | 2.35V @ 15V, 75A | 454 ns | 1200V | 150A | 600V, 75A, 6 Ω, 15V | 370nC | 300A | 34ns/282ns | 6.4mJ (on), 2.8mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
IHW40N135R5XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | TrenchStop™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | 394W | 1.95V @ 15V, 40A | Trench Field Stop | 1350V | 80A | 600V, 40A, 10 Ω, 15V | 305nC | 120A | -/410ns | 2mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRGP6690D-EPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Tube | 2014 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | 3 | TO-247-3 | Through Hole | 6.500007g | -40°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 483W | 483W | Single | 90 ns | 140A | 600V | 1.95V | 1.65V | 1.95V @ 15V, 75A | 400V, 75A, 10 Ω, 15V | 140nC | 225A | 85ns/222ns | 2.4mJ (on), 2.2mJ (off) |
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FGA6560WDF ON Semiconductor
FGA6560WDF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW
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IKW15N120T2FKSA1 Infineon Technologies
IKW15N120T2FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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IKQ40N120CH3XKSA1 Infineon Technologies
IKQ40N120CH3XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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IHW30N120R5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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STGP7NC60HD STMicroelectronics
STGP7NC60HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at HK JDW
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Trans IGBT Chip N-CH 600V 45A 3-Pin(3+Tab) ISOPLUS 247
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IRG7PH42UD1MPBF Infineon Technologies
IRG7PH42UD1MPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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IGW30N60TPXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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IKQ40N120CT2XKSA1 Infineon Technologies
IKQ40N120CT2XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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AIGB30N65F5ATMA1 Infineon Technologies
AIGB30N65F5ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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IKQ75N120CH3XKSA1 Infineon Technologies
IKQ75N120CH3XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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IHW40N135R5XKSA1 Infineon Technologies
IHW40N135R5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
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IRGP6690D-EPBF Infineon Technologies
IRGP6690D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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