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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Operating Temperature (Min) Number of Channels Subcategory Qualification Status Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Reverse Recovery Time Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IRF5210STRR IRF5210STRR Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 1998 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 200W Tc SWITCHING 0.06Ohm 100V SILICON P-Channel 60m Ω @ 24A, 10V 4V @ 250μA 2700pF @ 25V 180nC @ 10V 38A 40A Tc 100V 140A 120 mJ 10V ±20V
IRF7811 IRF7811 Infineon Technologies 0.0000
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0.00000000 download Tube HEXFET® Obsolete 1 (Unlimited) 8 Non-RoHS Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount MOSFET (Metal Oxide) 8541.29.00.95 e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G8 150°C -55°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 3.5W Ta SWITCHING SILICON N-Channel 11m Ω @ 15A, 4.5V 1V @ 250μA 1800pF @ 16V 23nC @ 5V 10.8A 14A Ta 28V 4.5V ±12V
NVMFS5C456NLWFAFT1G NVMFS5C456NLWFAFT1G ON Semiconductor 0.0000
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0.00000000 download 7 Weeks ACTIVE (Last Updated: 1 week ago) Tape & Reel (TR) Automotive, AEC-Q101 yes Active 1 (Unlimited) ROHS3 Compliant 8-PowerTDFN, 5 Leads not_compliant Surface Mount, Wettable Flank -55°C~175°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 55W Tc N-Channel 3.7m Ω @ 20A, 10V 2V @ 250μA 1600pF @ 25V 18nC @ 10V 87A Tc 40V 4.5V 10V ±20V
IRF9Z10 IRF9Z10 Vishay Siliconix 0.2592
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0.00000000 download 13 Weeks Through Hole Tube 2011 Active 1 (Unlimited) 175°C -55°C 10.41mm Non-RoHS Compliant 3 TO-220-3 9.01mm 4.7mm Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 11 ns 500mOhm TO-220AB 43W Tc 6.7A 10 ns P-Channel 500mOhm @ 4A, 10V 4V @ 250μA 270pF @ 25V 12nC @ 10V 63ns 31 ns 20V 6.7A Tc 60V 270pF 10V ±20V 500 mΩ
PSMN0R9-25YLC,115 PSMN0R9-25YLC,115 Nexperia USA Inc. 0.0000
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0.00000000 download 12 Weeks Tape & Reel (TR) 2011 Active 1 (Unlimited) 4 EAR99 ROHS3 Compliant HIGH RELIABILITY, ULTRA-LOW RESISTANCE SC-100, SOT-669 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.75 e3 Tin (Sn) SINGLE GULL WING 260 30 4 YES R-PSSO-G4 1 SINGLE WITH BUILT-IN DIODE DRAIN 272W Tc SWITCHING 0.00125Ohm 25V SILICON N-Channel 0.99m Ω @ 25A, 10V 1.95V @ 1mA 6775pF @ 12V 110nC @ 10V 100A 100A Tc 25V 1563A 342 mJ 4.5V 10V ±20V
SPI11N60S5BKSA1 SPI11N60S5BKSA1 Infineon Technologies 0.0000
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0.00000000 download Tube 2005 CoolMOS™ Obsolete 1 (Unlimited) TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) PG-TO262-3-1 125W Tc N-Channel 380mOhm @ 7A, 10V 5.5V @ 500μA 1460pF @ 25V 54nC @ 10V 11A Tc 600V 10V ±20V
IPP65R190C6XKSA1 IPP65R190C6XKSA1 Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 10.36mm ROHS3 Compliant Lead Free 3 TO-220-3 15.95mm 4.57mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 TO-220AB Halogen Free Single 13 ns 650V 151W Tc 20.2A SWITCHING 0.19Ohm 133 ns SILICON N-Channel 190m Ω @ 7.3A, 10V 3.5V @ 730μA 1620pF @ 100V 73nC @ 10V 12ns 10 ns 20V 20.2A Tc 66A 485 mJ 10V ±20V
IXTA88N085T7 IXTA88N085T7 IXYS 0.0000
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0.00000000 download Surface Mount Tube 2006 TrenchMV™ yes Obsolete 1 (Unlimited) 6 EAR99 RoHS Compliant TO-263-7, D2Pak (6 Leads + Tab), TO-263CB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G6 Not Qualified 1 DRAIN Single 230W 230W Tc 88A SWITCHING 0.011Ohm 42 ns SILICON N-Channel 11m Ω @ 25A, 10V 4V @ 100μA 3140pF @ 25V 69nC @ 10V 54ns 29 ns 85V 88A Tc 240A 500 mJ 10V ±20V
MCP60P06-BP MCP60P06-BP Micro Commercial Co 0.0000
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0.00000000 12 Weeks Active 1 (Unlimited) ROHS3 Compliant
IRFIBC40GLC IRFIBC40GLC Vishay Siliconix 2.2624
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0.00000000 download Through Hole Tube 2017 Obsolete 1 (Unlimited) 150°C -55°C 10.6mm Non-RoHS Compliant Contains Lead 4A No 3 TO-220-3 Full Pack, Isolated Tab 9.8mm 4.8mm Through Hole 6.000006g -55°C~150°C TJ 600V MOSFET (Metal Oxide) 1 Single 12 ns 1.2Ohm TO-220-3 40W Tc 3.5A 27 ns N-Channel 1.2Ohm @ 2.1A, 10V 4V @ 250μA 1100pF @ 25V 39nC @ 10V 20ns 17 ns 20V 600V 3.5A Tc 600V 1.1nF 10V ±20V 1.2 Ω
2SK2221-E 2SK2221-E Renesas Electronics America 12.2539
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0.00000000 download 16 Weeks Through Hole Tube 2005 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free Copper, Tin 8A No 3 TO-3P-3, SC-65-3 Through Hole 150°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE 4 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE SOURCE 100W Tc 8A SWITCHING SILICON N-Channel 600pF @ 10V 20V 8A 8A Ta ±20V
PSMN011-100YSFX PSMN011-100YSFX Nexperia USA Inc. 0.0000
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0.00000000 download 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) ROHS3 Compliant SC-100, SOT-669 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 152W Ta N-Channel 10.9m Ω @ 20A, 10V 4V @ 1mA 2.258nF @ 50V 34.3nC @ 10V 79.5A Ta 100V 7V 10V ±20V
BSZ033NE2LS5ATMA1 BSZ033NE2LS5ATMA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED S-PDSO-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 25V 2.1W Ta 30W Tc 40A SWITCHING 0.0041Ohm SILICON N-Channel 3.3m Ω @ 20A, 10V 2V @ 250μA 1230pF @ 12V 18.3nC @ 10V 18A Ta 40A Tc 160A 20 mJ 4.5V 10V ±16V
NTD6600N-001 NTD6600N-001 ON Semiconductor 0.0000
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0.00000000 download Through Hole Tube 2007 Obsolete 1 (Unlimited) Non-RoHS Compliant Contains Lead 12A TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) Single 56.6W 1.28W Ta 56.6W Tc 12A 26 ns N-Channel 146m Ω @ 6A, 5V 2V @ 250μA 700pF @ 25V 20nC @ 5V 75ns 50 ns 20V 100V 12A Ta 5V ±20V
SI3139KL3-TP SI3139KL3-TP Micro Commercial Co 0.1108
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0.00000000 download Active 1 (Unlimited) ROHS3 Compliant SC-101, SOT-883 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 100mW P-Channel 500m Ω @ 150mA, 4.5V 1.1V @ 250μA 113pF @ 16V 660mA 20V 1.8V 4.5V ±12V
AOT10N60 AOT10N60 Alpha & Omega Semiconductor Inc. 0.2755
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0.00000000 18 Weeks Through Hole Tube 2010 Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 Single 250W 250W Tc 10A N-Channel 750m Ω @ 5A, 10V 4.5V @ 250μA 1600pF @ 25V 40nC @ 10V 30V 10A Tc 600V 10V ±30V
IPD05N03LB G IPD05N03LB G Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2008 OptiMOS™ Obsolete 3 (168 Hours) 2 EAR99 RoHS Compliant LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING 260 NOT SPECIFIED 4 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 94W Tc SWITCHING 0.0048Ohm 30V SILICON N-Channel 4.8m Ω @ 60A, 10V 2V @ 40μA 3200pF @ 15V 25nC @ 5V 90A 90A Tc 30V 420A 120 mJ 4.5V 10V ±20V
NVB150N65S3F NVB150N65S3F ON Semiconductor 0.0000
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0.00000000 download Tape & Reel (TR) SuperFET® III yes Active 1 (Unlimited) Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 192W N-Channel 150m Ω @ 12A, 10V 5V @ 540μA 1999pF @ 400V 43nC @ 10V 24A 650V 10V ±30V
RSE002P03TL RSE002P03TL ROHM Semiconductor 0.0000
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0.00000000 7 Weeks Surface Mount Tape & Reel (TR) 2006 yes Not For New Designs 1 (Unlimited) 3 SMD/SMT EAR99 1.6mm ROHS3 Compliant Lead Free -200mA No 3 SC-75, SOT-416 No SVHC 700μm 800μm 1.4Ohm Surface Mount 150°C TJ -30V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 TIN SILVER COPPER DUAL GULL WING 260 10 3 Other Transistors 1 Single 150mW 8 ns 150mW Ta 200mA SWITCHING 30 ns SILICON P-Channel 1.4 Ω @ 200mA, 10V 2.5V @ 1mA 30pF @ 10V 5ns 5 ns 20V -30V 30V 2.5 V 0.2A 200mA Ta 4V 10V ±20V
IXFX20N120 IXFX20N120 IXYS 0.0000
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0.00000000 download Through Hole Tube 2003 HiPerFET™ yes Active 1 (Unlimited) 3 Through Hole EAR99 ROHS3 Compliant Lead Free No 3 TO-247-3 No SVHC 750mOhm Through Hole 6g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) 3 1 DRAIN Single 780W 4.5V 300 ns 780W Tc 20A SWITCHING 75 ns SILICON N-Channel 750m Ω @ 500mA, 10V 4.5V @ 8mA 7400pF @ 25V 160nC @ 10V 45ns 20 ns 30V 1.2kV 1.2kV 4.5 V 20A Tc 1200V 80A 2000 mJ 10V ±30V
IXTK210P10T IXTK210P10T IXYS 0.0000
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0.00000000 download 28 Weeks 2013 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant AVALANCHE RATED ENHANCEMENT MODE SINGLE THROUGH-HOLE 3 NO R-PSFM-T3 150°C Other Transistors 1 SINGLE WITH BUILT-IN DIODE TO-264AA DRAIN P-CHANNEL 1040W SWITCHING 0.0075Ohm 100V METAL-OXIDE SEMICONDUCTOR SILICON 210A 800A 3000 mJ
NVTFS5826NLTWG NVTFS5826NLTWG ON Semiconductor 0.0000
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0.00000000 download 23 Weeks ACTIVE, NOT REC (Last Updated: 1 day ago) Tape & Reel (TR) 2011 yes Active 1 (Unlimited) 5 EAR99 175°C -55°C 3.15mm ROHS3 Compliant Lead Free Tin No 8 750μm 3.15mm ENHANCEMENT MODE e3 DUAL FLAT 8 YES S-PDSO-F5 FET General Purpose Power 3.2W 1 DRAIN Halogen Free N-CHANNEL Single 22W 9 ns 24mOhm 20A METAL-OXIDE SEMICONDUCTOR 14 ns 29ns 21 ns 20V 60V 7.6A 20 mJ 850pF 24 mΩ
IXFH60N25Q IXFH60N25Q IXYS 0.0000
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0.00000000 download Through Hole Tube 2000 HiPerFET™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 3 AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 DRAIN Single 360W 360W Tc 60A 0.047Ohm 80 ns SILICON N-Channel 47m Ω @ 500mA, 10V 4V @ 4mA 5100pF @ 25V 180nC @ 10V 60ns 25 ns 20V 250V 60A Tc 240A 1500 mJ 10V ±20V
IXFA34N65X2-TRL IXFA34N65X2-TRL IXYS 0.0000
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0.00000000 19 Weeks Active TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 540W Tc N-Channel 100m Ω @ 17A, 10V 5V @ 2.5mA 3230pF @ 25V 56nC @ 10V 34A Tc 650V 10V ±30V
IXTA02N250HV IXTA02N250HV IXYS 13.4423
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0.00000000 download 17 Weeks Surface Mount Tube 2013 Active 1 (Unlimited) 2 ROHS3 Compliant Lead Free No TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount 1.770002g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING 3 R-PSSO-G2 1 1 DRAIN Single 83W 19 ns 83W Tc 200mA SWITCHING 32 ns SILICON N-Channel 450 Ω @ 50mA, 10V 4.5V @ 250μA 116pF @ 25V 7.4nC @ 10V 19ns 33 ns 20V 2.5kV 0.2A 200mA Tc 2500V 0.6A 10V ±20V
IXFP90N20X3M IXFP90N20X3M IXYS 3.6298
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0.00000000 download 19 Weeks Tube 2017 HiPerFET™ Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Full Pack, Isolated Tab Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) 36W Tc N-Channel 12.8m Ω @ 45A, 10V 4.5V @ 1.5mA 5420pF @ 25V 78nC @ 10V 90A Tc 200V 10V ±20V
MCB85N06Y-TP MCB85N06Y-TP Micro Commercial Co 1.5710
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0.00000000 download 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 85W N-Channel 13m Ω @ 30A, 10V 2.4V @ 250μA 2498pF @ 25V 36nC @ 10V 85A Tc 60V 10V ±20V
R6020KNZ4C13 R6020KNZ4C13 ROHM Semiconductor 0.0000
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0.00000000 download 8 Weeks Active 1 (Unlimited) 3 ROHS3 Compliant TO-247-3 Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE 231W Tc SWITCHING 0.196Ohm 600V SILICON N-Channel 196m Ω @ 9.5A, 10V 5V @ 1mA 1550pF @ 25V 40nC @ 10V 20A 20A Tc 600V 60A 418 mJ 10V ±20V
IXTP5N50P IXTP5N50P IXYS 0.0000
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0.00000000 download 8 Weeks Through Hole Tube 2006 PolarHV™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant Lead Free 5A 3 AVALANCHE RATED TO-220-3 Through Hole -55°C~150°C TJ 500V MOSFET (Metal Oxide) ENHANCEMENT MODE Pure Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 TO-220AB DRAIN Single 89W 89W Tc 4.8A SWITCHING 65 ns SILICON N-Channel 1.4 Ω @ 2.4A, 10V 5.5V @ 50μA 620pF @ 25V 12.6nC @ 10V 26ns 24 ns 30V 500V 5A 4.8A Tc 10A 250 mJ 10V ±30V
IXTU5N50P IXTU5N50P IXYS 0.0000
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0.00000000 download Surface Mount Tube 2006 PolarHV™ Active 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 TO-251 DRAIN Single 89W 89W Tc 4.8A 65 ns SILICON N-Channel 1.4 Ω @ 2.4A, 10V 5.5V @ 50μA 620pF @ 25V 12.6nC @ 10V 26ns 24 ns 30V 500V 5A 4.8A Tc 10A 250 mJ 10V ±30V
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