Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Power Dissipation-Max (Abs) | Element Configuration | Power Dissipation | Turn On Delay Time | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Rise Time-Max | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SGW20N60HSFKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2009 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | TO-247-3 | unknown | Through Hole | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | 178W | 178W | 1 | TO-247AC | COLLECTOR | N-CHANNEL | Single | 36A | 600V | 600V | MOTOR CONTROL | SILICON | 30 ns | 3.15V @ 15V, 20A | 235 ns | NPT | 400V, 20A, 16 Ω, 15V | 100nC | 80A | 18ns/207ns | 690μJ | |||||||||||||||||||||||||||||||||||||||||
 |
NGTB40N135IHRWG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | ACTIVE (Last Updated: 1 day ago) | Through Hole | Tube | 2006 | yes | Active | 1 (Unlimited) | EAR99 | 16.25mm | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | No SVHC | 21.4mm | 5.3mm | Through Hole | 6.500007g | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Insulated Gate BIP Transistors | 394W | 394W | Halogen Free | N-CHANNEL | Single | 80A | 1.35kV | 1.35kV | 2.4V | 2.7V @ 15V, 40A | Trench Field Stop | 20V | 1350V | 6.5V | 600V, 40A, 10 Ω, 15V | 234nC | 120A | -/250ns | 1.3mJ (off) | ||||||||||||||||||||||||||||||||||||
 |
78124 | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Obsolete | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FGH12040WD-F155 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | ACTIVE (Last Updated: 6 days ago) | Through Hole | 2012 | yes | Active | 1 (Unlimited) | ROHS3 Compliant | 3 | TO-247-3 | No SVHC | not_compliant | Through Hole | 6.39g | -55°C~175°C TJ | Standard | 428W | 71ns | 1.2kV | 2.3V | 2.9V @ 15V, 40A | Trench Field Stop | 1200V | 80A | 600V, 40A, 23 Ω, 15V | 226nC | 100A | 45ns/560ns | 4.1mJ (on), 1mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRG7PSH50UDPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2010 | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | No | 247 | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e3 | MATTE TIN OVER NICKEL | 260 | 40 | R-PSFM-T3 | Insulated Gate BIP Transistors | 462W | 462W | 1 | COLLECTOR | N-CHANNEL | Single | 190 ns | 116A | 1.2kV | 2V | 60ns | POWER CONTROL | SILICON | 70 ns | 2V @ 15V, 50A | 650 ns | Trench | 30V | 1200V | 6V | 65ns | 600V, 50A, 5 Ω, 15V | 440nC | 150A | 35ns/430ns | 3.6mJ (on), 2.2mJ (off) | |||||||||||||||||||||||||||||||||||
|
NGTD23T120F2SWK | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | Tape & Reel (TR) | 2016 | yes | Active | ROHS3 Compliant | Die | Surface Mount | -55°C~175°C TJ | Standard | 2.2V @ 15V, 25A | Trench Field Stop | 1200V | 120A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AOT15B65M1 | Alpha & Omega Semiconductor Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 18 Weeks | Through Hole | Tube | 2010 | Alpha IGBT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~175°C TJ | Standard | 214W | 214W | TO-220 | 317 ns | 30A | 650V | 2.15V | 2.15V @ 15V, 15A | 650V | 30A | 400V, 15A, 20Ohm, 15V | 32nC | 45A | 13ns/116ns | 290μJ (on), 200μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IKA03N120H2XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2013 | Obsolete | 1 (Unlimited) | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | Standard | 29W | 52ns | 2.8V @ 15V, 3A | 1200V | 8.2A | 800V, 3A, 82 Ω, 15V | 8.6nC | 9A | 9.2ns/281ns | 290μJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
STGW35NB60S | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | PowerMESH™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | STGW35 | 3 | Insulated Gate BIP Transistors | 200W | 200W | 1 | ISOLATED | N-CHANNEL | Single | 70A | 600V | 600V | POWER CONTROL | SILICON | 153 ns | 1.7V @ 15V, 20A | 3600 ns | 20V | 5V | 480V, 20A, 100 Ω, 15V | 83nC | 250A | 92ns/1.1μs | 840μJ (on), 7.4mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
 |
IXGH72N60B3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 16.26mm | ROHS3 Compliant | 3 | LOW CONDUCTION LOSS | TO-247-3 | 21.46mm | 5.3mm | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*72N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 540W | 540W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 75A | 600V | 600V | POWER CONTROL | SILICON | 63 ns | 1.8V @ 15V, 60A | 370 ns | PT | 20V | 5V | 160ns | 480V, 50A, 3 Ω, 15V | 230nC | 400A | 31ns/150ns | 1.38mJ (on), 1.05mJ (off) | |||||||||||||||||||||||||||||||
 |
AUIRGP4062D | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | 2011 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 250W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AC | COLLECTOR | N-CHANNEL | 250W | 89ns | 31ns | POWER CONTROL | SILICON | 64 ns | 1.95V @ 15V, 24A | 164 ns | 20V | 600V | 48A | 6.5V | 41ns | 400V, 24A, 10 Ω, 15V | 50nC | 72A | 41ns/104ns | 115μJ (on), 600μJ (off) | ||||||||||||||||||||||||||||||||||||||||
 |
APT45GP120BG | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 23 Weeks | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 3 | 21.46mm | RoHS Compliant | Lead Free | 100A | No | LOW CONDUCTION LOSS | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | 1.2kV | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | 625W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 100A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 3.3V | 47 ns | 3.9V @ 15V, 45A | 230 ns | PT | 1200V | 100A | 600V, 45A, 5 Ω, 15V | 185nC | 170A | 18ns/102ns | 900μJ (on), 904μJ (off) | ||||||||||||||||||||||||||||||||
|
IXGH50N90B2 | IXYS | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | Through Hole | Tube | 2005 | HiPerFAST™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*50N90 | 3 | Not Qualified | 400W | 400W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 75A | 900V | 900V | POWER CONTROL | SILICON | 48 ns | 2.7V @ 15V, 50A | 820 ns | PT | 720V, 50A, 5 Ω, 15V | 135nC | 200A | 20ns/350ns | 4.7mJ (off) | ||||||||||||||||||||||||||||||||||||||||
|
IRG4CC50UB | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | 2017 | Obsolete | 1 (Unlimited) | EAR99 | Non-RoHS Compliant | ULTRA FAST SPEED | Die | Through Hole | Standard | e0 | Tin/Lead (Sn/Pb) | UPPER | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | O-XUUC-N | Insulated Gate BIP Transistors | Not Qualified | 1 | SINGLE | N-CHANNEL | SILICON | 2V @ 15V, 10A | 600V | 55A | 6V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXGH30N120C3H1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Through Hole | Tube | 2007 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*30N120 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 250W | 250W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | COLLECTOR | N-CHANNEL | 70 ns | 48A | 1.2kV | 4.2V | POWER CONTROL | SILICON | 60 ns | 4.2V @ 15V, 24A | 415 ns | PT | 20V | 1200V | 5V | 600V, 24A, 5 Ω, 15V | 80nC | 115A | 18ns/106ns | 1.45mJ (on), 470μJ (off) | ||||||||||||||||||||||||||||||||||
 |
FGB30N6S2DT | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | Standard | FGB30N6 | 167W | TO-263AB | 46ns | 2.5V @ 15V, 12A | 600V | 45A | 390V, 12A, 10Ohm, 15V | 23nC | 108A | 6ns/40ns | 55μJ (on), 100μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
STGP35HF60W | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | ACTIVE (Last Updated: 7 months ago) | Through Hole | Tube | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | No | TO-220-3 | Through Hole | -55°C~150°C TJ | Standard | STGP35 | Insulated Gate BIP Transistors | 200W | N-CHANNEL | Single | 200W | 60A | 600V | 600V | 1.65V | 2.5V @ 15V, 20A | 20V | 5.75V | 400V, 20A, 10 Ω, 15V | 140nC | 150A | 30ns/175ns | 290μJ (on), 185μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
STGW35NC60WD | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | PowerMESH™ | Obsolete | 1 (Unlimited) | 3 | Through Hole | EAR99 | ROHS3 Compliant | No | 3 | TO-247-3 | No SVHC | Through Hole | -55°C~150°C TJ | Standard | STGW35 | 3 | Insulated Gate BIP Transistors | 260W | 260W | 1 | TO-247AC | N-CHANNEL | Single | 250W | 40 ns | 70A | 600V | 600V | POWER CONTROL | SILICON | 12ns | 2.5V | 42.5 ns | 2.6V @ 15V, 20A | 197 ns | 20V | 5.75V | 390V, 20A, 10 Ω, 15V | 102nC | 150A | 29.5ns/118ns | 305μJ (on), 181μJ (off) | ||||||||||||||||||||||||||||||||||||||
|
IXGH25N120A | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Through Hole | Tube | 1997 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | HIGH SPEED | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | Insulated Gate BIP Transistors | Not Qualified | 200W | 200W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 50A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 350 ns | 4V @ 15V, 25A | 1520 ns | 20V | 4 V | 1200V | 6V | 960V, 25A, 33 Ω, 15V | 130nC | 100A | 100ns/650ns | 11mJ (off) | |||||||||||||||||||||||||||||||||||||
 |
IXGP50N60C4 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2011 | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | TO-220-3 | Through Hole | -55°C~150°C TJ | Standard | SINGLE | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 300W | 300W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 90A | 600V | 2.3V | POWER CONTROL | SILICON | 75 ns | 2.3V @ 15V, 36A | 306 ns | PT | 20V | 6.5V | 400V, 36A, 10 Ω, 15V | 113nC | 220A | 40ns/270ns | 950μJ (on), 840μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
|
FGH40T100SMD-F155 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 9 Weeks | ACTIVE (Last Updated: 1 day ago) | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 333W | 333W | Single | 78 ns | 80A | 1kV | 2.3V | 2.3V @ 15V, 40A | Trench Field Stop | 1000V | 600V, 40A, 10 Ω, 15V | 398nC | 120A | 29ns/285ns | 2.35mJ (on), 1.15mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
STGF7NB60SL | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | ACTIVE (Last Updated: 7 months ago) | Through Hole | Tube | PowerMESH™ | Active | 1 (Unlimited) | 3 | EAR99 | 10.4mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack | No SVHC | 9.3mm | 4.6mm | Through Hole | 2.299997g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) - annealed | STGF7 | 3 | Insulated Gate BIP Transistors | 25W | 1 | ISOLATED | N-CHANNEL | Single | 25W | 1.1 μs | 15A | 600V | 600V | POWER CONTROL | SILICON | 250ns | 1.2V | 1350 ns | 1.6V @ 4.5V, 7A | 8100 ns | 20V | 15A | 2.4V | 480V, 7A, 1k Ω, 5V | 16nC | 20A | 1.1μs/5.2μs | 4.1mJ (off) | ||||||||||||||||||||||||||||||
 |
IRGB4045DPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2006 | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.66mm | RoHS Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 9.02mm | 4.82mm | Through Hole | -55°C~175°C TJ | Standard | Insulated Gate BIP Transistors | 77W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 77W | 27 ns | 74 ns | 12A | 600V | 2V | POWER CONTROL | 75 ns | SILICON | 11ns | 1.7V | 38 ns | 2V @ 15V, 6A | 127 ns | Trench | 20V | 6.5V | 22ns | 400V, 6A, 47 Ω, 15V | 13nC | 18A | 27ns/75ns | 56μJ (on), 122μJ (off) | |||||||||||||||||||||||||||||||||
|
STGF3NB60FD | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | PowerMESH™ | Obsolete | 1 (Unlimited) | 3 | Non-RoHS Compliant | Contains Lead | 3A | TO-220-3 Full Pack | Through Hole | 150°C TJ | 600V | Standard | SINGLE | 245 | NOT SPECIFIED | STGF3 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 25W | 25W | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | N-CHANNEL | 45 ns | 6A | 600V | 2.4V | MOTOR CONTROL | SILICON | 60ns | 16.5 ns | 2.4V @ 15V, 3A | 535 ns | 20V | 5V | 480V, 3A, 10 Ω, 15V | 16nC | 24A | 12.5ns/105ns | 125μJ (off) | ||||||||||||||||||||||||||||||||||||
 |
IRG4PSH71UD | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | 2004 | Obsolete | 1 (Unlimited) | 3 | Non-RoHS Compliant | ULTRA FAST SWITCHING | TO-274AA | Through Hole | -55°C~150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSIP-T3 | Not Qualified | 350W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 110ns | POWER CONTROL | SILICON | 121 ns | 2.7V @ 15V, 70A | 810 ns | 1200V | 99A | 960V, 70A, 5 Ω, 15V | 380nC | 200A | 46ns/250ns | 8.8mJ (on), 9.4mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
RGT8TM65DGC9 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 16W | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | N-CHANNEL | 40ns | POWER CONTROL | SILICON | 54 ns | 2.1V @ 15V, 4A | 158 ns | Trench Field Stop | 650V | 5A | 400V, 4A, 50 Ω, 15V | 13.5nC | 12A | 17ns/69ns | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
GPA040A120L-FD | Global Power | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | 2014 | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
APT30GP60BDQ1G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | POWER MOS 7® | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 30A | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | 463W | 463W | 1 | COLLECTOR | N-CHANNEL | Single | 100A | 600V | 600V | POWER CONTROL | SILICON | 31 ns | 2.7V @ 15V, 30A | 165 ns | PT | 400V, 30A, 5 Ω, 15V | 90nC | 120A | 13ns/55ns | 260μJ (on), 250μJ (off) | ||||||||||||||||||||||||||||||||||||||||
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STGW45NC60WD | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | PowerMESH™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | 16.03mm | ROHS3 Compliant | Lead Free | No | TO-247-3 | 21.09mm | 5.16mm | Through Hole | 38.000013g | -55°C~150°C TJ | Standard | e3 | Tin (Sn) | STGW45 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 285W | 285W | 1 | TO-247AC | N-CHANNEL | Single | 45 ns | 90A | 600V | 600V | POWER CONTROL | SILICON | 46 ns | 2.6V @ 15V, 30A | 280 ns | 20V | 5.75V | 390V, 30A, 10 Ω, 15V | 126nC | 230A | 33ns/168ns | 302μJ (on), 349μJ (off) | |||||||||||||||||||||||||||||||||||
 |
NGB8206N | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2009 | no | Obsolete | 2 (1 Year) | 2 | Non-RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | Logic | e0 | Tin/Lead (Sn80Pb20) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | NGB8206 | 3 | YES | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 150W | 1 | SINGLE WITH BUILT-IN DIODE AND RESISTOR | COLLECTOR | N-CHANNEL | 150W | 8000ns | AUTOMOTIVE IGNITION | SILICON | 6500 ns | 1.9V @ 4.5V, 20A | 18500 ns | 15V | 390V | 20A | 2.1V | 14000ns | 300V, 9A, 1k Ω, 5V | 50A | -/5μs |
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