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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Input Type HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Qualification Status Gain Max Power Dissipation Power - Max Reference Standard Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Application Number of Phases Rep Pk Reverse Voltage-Max Polarity Forward Current Forward Voltage Case Connection Structure Halogen Free Polarity/Channel Type Power Dissipation-Max (Abs) Collector Current-Max (IC) Repetitive Peak Off-state Voltage Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Supplier Device Package Input Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Max Repetitive Reverse Voltage (Vrrm) Peak Non-Repetitive Surge Current Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Capacitance @ Vr, F Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Transistor Type Input Capacitance Collector-Emitter Voltage-Max Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage Turn On Time Vce(on) (Max) @ Vge, Ic Turn Off Time-Nom (toff) IGBT Type NTC Thermistor Gate-Emitter Voltage-Max Input Capacitance (Cies) @ Vce VCEsat-Max Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Test Condition Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Voltage - Off State Current - On State (It (RMS)) (Max) Current - Hold (Ih) (Max) Repetitive Peak Reverse Voltage Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) Current - On State (It (AV)) (Max) Number of SCRs, Diodes DC Current Gain (hFE) (Min) @ Ic, Vce Frequency - Transition Noise Figure (dB Typ @ f)
SN7002NH6327XTSA2 SN7002NH6327XTSA2 Infineon Technologies 0.0000
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0.00000000 download 10 Weeks Surface Mount Tape & Reel (TR) 2003 Automotive, AEC-Q101, SIPMOS® yes Active 1 (Unlimited) 3 EAR99 2.9mm ROHS3 Compliant Lead Free No 3 LOGIC LEVEL COMPATIBLE TO-236-3, SC-59, SOT-23-3 No SVHC 1.1mm 1.3mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING 3 1 1 Halogen Free Single 360mW 2.4 ns 1.4V 60V 360mW Ta 200mA 150°C 5Ohm 5.3 ns SILICON N-Channel 5 Ω @ 500mA, 10V 1.8V @ 26μA 45pF @ 25V 1.5nC @ 10V 3.2ns 3.6 ns 20V 60V 0.2A 200mA Ta 4.2 pF 4.5V 10V ±20V
IDK08G65C5XTMA1 IDK08G65C5XTMA1 Infineon Technologies 0.0000
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 CoolSiC™+ Discontinued 1 (Unlimited) 175°C -55°C ROHS3 Compliant Lead Free 2 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount Silicon Carbide Schottky Halogen Free Single PG-TO263-2 No Recovery Time > 500mA (Io) 1.4mA @ 650V 1.8V @ 8A -55°C~175°C 650V 8A 1.4mA 650V 68A 650V 8A DC 0ns 250pF @ 1V 1MHz
FF600R12IS4FBOSA1 FF600R12IS4FBOSA1 Infineon Technologies 0.0000
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0.00000000 2002 no Obsolete 1 (Unlimited) 7 EAR99 RoHS Compliant Module compliant Chassis Mount -40°C~125°C UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED 11 NO R-XUFM-X7 Insulated Gate BIP Transistors Not Qualified 3700W 2 2 Independent ISOLATED N-CHANNEL 3700W Standard POWER CONTROL SILICON 5mA 270 ns 3.75V @ 15V, 600A 630 ns Yes 20V 39nF @ 25V 3.75 V 1200V 600A
IRG5U400SD12B IRG5U400SD12B Infineon Technologies 0.0000
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0.00000000 Chassis Mount 2014 Obsolete 1 (Unlimited) RoHS Compliant POWIR® 62 Module Chassis Mount -40°C~150°C TJ 2.5kW 2500W Single Standard 600A 1.2kV 3.5V 45.5nF 5mA 3.5V @ 15V, 400A No 45.5nF @ 25V 1200V
IDH03G65C5XKSA1 IDH03G65C5XKSA1 Infineon Technologies 0.0000
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0.00000000 download 17 Weeks Through Hole Tube 2013 CoolSiC™+ yes Discontinued 1 (Unlimited) 2 EAR99 175°C -55°C ROHS3 Compliant Lead Free 2 HIGH RELIABILITY TO-220-2 No SVHC Through Hole 8541.10.00.80 e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Rectifier Diodes 42W 1 Silicon Carbide Schottky 3A EFFICIENCY 1 3A 1.7V CATHODE Halogen Free 31A Single No Recovery Time > 500mA (Io) 50μA @ 600V 1.7V @ 3A -55°C~175°C 50μA 650V 31A 3A DC 0ns 100pF @ 1V 1MHz
SIDC38D60C6X1SA3 SIDC38D60C6X1SA3 Infineon Technologies 0.0000
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0.00000000 download Bulk Discontinued 1 (Unlimited) 1 EAR99 Non-RoHS Compliant Die Surface Mount 8541.10.00.40 e3 MATTE TIN UPPER NO LEAD 1 YES R-XUUC-N1 175°C Not Qualified SILICON 1 SINGLE Standard 150A FAST SOFT RECOVERY 1 600V Standard Recovery >500ns, > 200mA (Io) 27μA @ 600V 1.9V @ 150A -40°C~175°C 600V 150A DC
SIGC07T60NCX1SA4 SIGC07T60NCX1SA4 Infineon Technologies 0.0000
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0.00000000 download Last Time Buy 1 (Unlimited) ROHS3 Compliant Die Surface Mount -55°C~150°C TJ Standard Die 2.5V @ 15V, 6A NPT 600V 6A 300V, 6A, 54Ohm, 15V 18A 21ns/110ns
6MS24017E33W32860NOSA1 6MS24017E33W32860NOSA1 Infineon Technologies 0.0000
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0.00000000 download 12 Weeks 2007 ModSTACK™ 3 Active 1 (Unlimited) Non-RoHS Compliant Contains Lead Module Chassis Mount -25°C~55°C Three Phase Inverter Not Halogen Free Standard 2.4V @ 15V, 1200A No
6PS04512E43G37986NOSA1 6PS04512E43G37986NOSA1 Infineon Technologies 0.0000
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0.00000000 20 Weeks 2007 Obsolete Not Applicable Non-RoHS Compliant Contains Lead Module Chassis Mount -25°C~55°C Three Phase Inverter Not Halogen Free Standard Trench Field Stop Yes 1200V
IPI26CNE8N G IPI26CNE8N G Infineon Technologies 0.0000
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0.00000000 download Tube 2006 OptiMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant TO-262-3 Long Leads, I2Pak, TO-262AA compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE 260 40 3 NO R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 71W Tc SWITCHING 0.026Ohm 85V SILICON N-Channel 26m Ω @ 35A, 10V 4V @ 39μA 2070pF @ 40V 31nC @ 10V 35A 35A Tc 85V 140A 65 mJ 10V ±20V
FF450R12ME4BOSA1 FF450R12ME4BOSA1 Infineon Technologies 0.0000
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0.00000000 download 16 Weeks 2013 no Active 1 (Unlimited) 11 EAR99 ROHS3 Compliant Contains Lead Module Chassis Mount -40°C~150°C TJ UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED 11 NO R-XUFM-X11 Not Qualified 2250W 2 Half Bridge ISOLATED Not Halogen Free N-CHANNEL Dual Standard SILICON 3mA 290 ns 2.1V @ 15V, 450A 740 ns Trench Field Stop Yes 28nF @ 25V 1200V 675A
D850N28TXPSA1 D850N28TXPSA1 Infineon Technologies 0.0000
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0.00000000 download Bulk 2009 Obsolete Not Applicable RoHS Compliant DO-200AB, B-PUK compliant Chassis Mount Standard Standard Recovery >500ns, > 200mA (Io) 50mA @ 2800V 1.28V @ 850A -40°C~160°C 2800V 850A
IRG4BC30W-STRL IRG4BC30W-STRL Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 1997 Obsolete 1 (Unlimited) Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ Standard IRG4BC30W-S 100W D2PAK 2.7V @ 15V, 12A 600V 23A 480V, 12A, 23Ohm, 15V 51nC 92A 25ns/99ns 130μJ (on), 130μJ (off)
IRFU1010Z IRFU1010Z Infineon Technologies 0.0000
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0.00000000 Tube 2004 HEXFET® Obsolete 1 (Unlimited) Non-RoHS Compliant TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 140W Tc N-Channel 7.5m Ω @ 42A, 10V 4V @ 100μA 2840pF @ 25V 95nC @ 10V 42A Tc 55V 10V ±20V
TDB6HK124N16RRBOSA1 TDB6HK124N16RRBOSA1 Infineon Technologies 0.0000
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0.00000000 download 16 Weeks Bulk 2000 no Active Not Applicable 22 EAR99 RoHS Compliant Contains Lead Module Chassis Mount -40°C~125°C 8541.30.00.80 UPPER PIN/PEG NOT SPECIFIED NOT SPECIFIED NO R-XUFM-P22 Not Qualified 3 3 PHASE BRIDGE, HALF-CONTROLLED WITH BUILT-IN IGBT NPN Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode Not Halogen Free 1.6kV SCR 70A 200mA 2.5V 650A @ 50Hz 150mA 125A 3 SCRs
FF200R12KT3EHOSA1 FF200R12KT3EHOSA1 Infineon Technologies 0.0000
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0.00000000 download 14 Weeks Screw 2002 Active 1 (Unlimited) 7 EAR99 RoHS Compliant Lead Free 7 UL RECOGNIZED Module Chassis Mount -40°C~125°C UPPER UNSPECIFIED 1050W 2 2 Independent ISOLATED Not Halogen Free N-CHANNEL Dual Standard 295A 1.2kV POWER CONTROL SILICON 5mA 215 ns 2.15V @ 15V, 200A 680 ns No 14nF @ 25V 1200V
FP25R12KT4B15BOSA1 FP25R12KT4B15BOSA1 Infineon Technologies 0.0000
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0.00000000 download 12 Weeks 2002 Active Not Applicable 24 EAR99 RoHS Compliant Contains Lead UL APPROVED Module Chassis Mount -40°C~150°C UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED NO R-XUFM-X24 160W 7 Three Phase Inverter ISOLATED Not Halogen Free N-CHANNEL Standard 1.2kV POWER CONTROL SILICON 1mA 1.85V 210 ns 2.15V @ 15V, 25A 620 ns Trench Field Stop Yes 1.45nF @ 25V 1200V 25A
FZ400R17KE4HOSA1 FZ400R17KE4HOSA1 Infineon Technologies 0.0000
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0.00000000 download 14 Weeks Bulk 2002 no Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED 5 NO R-XUFM-X3 150°C Not Qualified 1 SINGLE WITH BUILT-IN DIODE ISOLATED Not Halogen Free N-CHANNEL 550A POWER CONTROL SILICON 1700V 355 ns 930 ns
IRLML2502TRPBF IRLML2502TRPBF Infineon Technologies 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 3 SMD/SMT EAR99 2.794mm ROHS3 Compliant Lead Free Tin 4.2A No 3 HIGH RELIABILITY TO-236-3, SC-59, SOT-23-3 No SVHC 1.016mm 3.05mm 45mOhm Surface Mount -55°C~150°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 30 FET General Purpose Power 1 Single 1.25W 7.5 ns 1.2V 1.25W Ta 4.2A SWITCHING 54 ns SILICON N-Channel 45m Ω @ 4.2A, 4.5V 1.2V @ 250μA 740pF @ 15V 12nC @ 5V 10ns 26 ns 12V 20V 20V 1.2 V 4.2A Ta 2.5V 4.5V ±12V
TD330N16KOFTIMHPSA1 TD330N16KOFTIMHPSA1 Infineon Technologies 0.0000
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0.00000000 download 8 Weeks Tray 2012 Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant HIGH RELIABILITY, UL RECOGNIZED Module Chassis Mount -40°C~130°C 8541.30.00.80 UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED NO R-PUFM-X5 IEC-747-6 1 SINGLE WITH BUILT-IN DIODE ISOLATED Series Connection - SCR/Diode 1600V SCR 1.6kV 520A 300mA 1600V 2V 12500A @ 50Hz 200mA 330A 2 SCRs
IRF7421D1TR IRF7421D1TR Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) 2004 FETKY™ Obsolete 1 (Unlimited) Non-RoHS Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 2W Ta N-Channel 35m Ω @ 4.1A, 10V 1V @ 250μA 510pF @ 25V 27nC @ 10V Schottky Diode (Isolated) 5.8A Ta 30V 4.5V 10V ±20V
IRF6893MTR1PBF IRF6893MTR1PBF Infineon Technologies 0.0000
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0.00000000 download Tape & Reel (TR) 2012 HEXFET® Obsolete 1 (Unlimited) DirectFET™ Isometric MX Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) 2.1W Ta 69W Tc N-Channel 1.6m Ω @ 29A, 10V 2.1V @ 100μA 3480pF @ 13V 38nC @ 4.5V 29A Ta 168A Tc 25V 4.5V 10V ±16V
IPS70R900P7SAKMA1 IPS70R900P7SAKMA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Tube 2005 CoolMOS™ P7 yes Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA not_compliant Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) 30.5W Tc N-Channel 900m Ω @ 1.1A, 10V 3.5V @ 60μA 211pF @ 400V 6.8nC @ 10V 6A Tc 700V 10V ±16V
BFP450E6433BTMA1 BFP450E6433BTMA1 Infineon Technologies 0.0000
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0.00000000 Surface Mount Tape & Reel (TR) 2011 Obsolete 1 (Unlimited) RoHS Compliant SC-82A, SOT-343 Surface Mount 150°C TJ BFP450 15.5dB 450mW 450mW PG-SOT343-4 100mA 5V NPN 5V 100mA 60 @ 50mA 4V 24GHz 1.25dB @ 1.8GHz
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