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IGBTs Modules
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IGBT module product filter
Common filter conditions include, manufacturer, configuration, collector maximum current, voltage, pin count, etc.
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 12 Weeks
- 14 Weeks
- 16 Weeks
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Panel, Screw
- Screw
Mounting Type
- Chassis Mount
Number of Pins
- 20
- 23
- 24
- 29
- 7
Number of Terminations
- 20
- 23
- 24
- 29
- 35
- 7
Operating Temperature
- -40°C~125°C
- -40°C~125°C TJ
- -40°C~150°C
- -40°C~150°C TJ
Package / Case
- Module
Part Status
- Active
- Not For New Designs
Pbfree Code
- no
- yes
Published
- 2001
- 2002
- 2014
Series
- C
Surface Mount
- NO
Transistor Element Material
- SILICON
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | Polarity | Case Connection | Halogen Free | Polarity/Channel Type | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Element Configuration | Power Dissipation | Max Breakdown Voltage | Supplier Device Package | Input | Reverse Voltage | Number of Terminals | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Application | Transistor Element Material | Input Capacitance | Collector-Emitter Voltage-Max | Current - Collector Cutoff (Max) | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | NTC Thermistor | Gate-Emitter Voltage-Max | Input Capacitance (Cies) @ Vce | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Channel Type | Maximum Operating Temperature (°C) | Minimum Operating Temperature (°C) | Mounting | Package Height | Package Length | Package Width | PCB changed | ECCN (US) | Military | Typical Collector Emitter Saturation Voltage (V) | Maximum Collector-Emitter Voltage (V) | Maximum Gate Emitter Voltage (V) | Maximum Continuous Collector Current (A) | Maximum Gate Emitter Leakage Current (uA) |
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FP25R12W2T7B11BPSA1 | Infineon Technologies AG | 113.5398 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | Yes with exemptions | Trench Stop | 23 | Hex | N | 175 | -40 | Screw | 12 | 56.7 | 48 | 23 | EAR99 | No | 1.6 | 1200 | ±20 | 25 | 0.1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FF450R33T3E3B5P3BPSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | XHP™3 | Active | Module | Chassis Mount | -40°C~150°C TJ | 1000000W | 2 Independent | Standard | 5mA | 2.75V @ 15V, 450A | Trench Field Stop | No | 84nF @ 25V | 3300V | 450A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APTGT75DA60T1G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 36 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Chassis Mount, Screw | 2007 | yes | Active | 1 (Unlimited) | 12 | EAR99 | RoHS Compliant | 1 | SP1 | Chassis Mount | -40°C~175°C TJ | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | 12 | Not Qualified | 250W | 250W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 100A | 600V | 1.9V | MOTOR CONTROL | SILICON | 4.62nF | 250μA | 170 ns | 1.9V @ 15V, 75A | 310 ns | Trench Field Stop | Yes | 4.62nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
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FF200R12KS4 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | icon-pbfree yes | EAR99 | RoHS Compliant | FAST | compliant | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 7 | NO | R-XUFM-X7 | 150°C | Insulated Gate BIP Transistors | Not Qualified | 2 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 1400W | 275A | 7 | SILICON | 1200V | 180 ns | 590 ns | 20V | 3.7 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FD400R33KF2C | Infineon | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2002 | no | Active | 5 | EAR99 | 125°C | -40°C | RoHS Compliant | Contains Lead | Module | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 7 | NO | R-XUFM-X5 | Insulated Gate BIP Transistors | Not Qualified | 1 | ISOLATED | Not Halogen Free | N-CHANNEL | 660A | Single | 4.8kW | 330V | POWER CONTROL | 3.4V | 480 ns | 1900 ns | 20V | 4.25 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GHIS040A060S-A1 | Global Power | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | 2014 | Active | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APTGTQ150TA65TPG | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 2015 | Active | RoHS Compliant | Module | Chassis Mount | -40°C~175°C TJ | 365W | Three Phase Inverter | Standard | 150μA | 2.2V @ 15V, 150A | Yes | 9nF @ 25V | 650V | 150A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FF600R12IE4PNOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 50 Weeks | Active | 1 (Unlimited) | Non-RoHS Compliant | Module | Chassis Mount | -40°C~150°C | 3350W | Half Bridge | Standard | 5mA | 2.05V @ 15V, 600A | Trench Field Stop | Yes | 37nF @ 25V | 1200V | 600A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CM150DX-24S | Powerex Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2012 | IGBTMOD™ | Obsolete | 1 (Unlimited) | RoHS Compliant | 11 | Module | unknown | -40°C~150°C TJ | Insulated Gate BIP Transistors | 1.15kW | 1150W | 1 | Half Bridge | 1.2kV | Standard | 150A | 1.2kV | 2.25V | 15nF | 1mA | 2.25V @ 15V, 150A | Yes | 20V | 15nF @ 10V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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6MS16017P43W40383NOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | 2007 | Active | Not Applicable | Non-RoHS Compliant | Contains Lead | Module | Chassis Mount | -25°C~55°C | Three Phase Inverter | Not Halogen Free | Standard | Yes | 1700V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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QID1210007 | Powerex Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2014 | Active | 1 (Unlimited) | RoHS Compliant | -40°C~150°C TJ | 730W | 730W | 2 Independent | Standard | 100A | 1.2kV | 6.5V | 16nF | 1mA | 6.5V @ 15V, 100A | No | 16nF @ 10V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APTGT50TDU170PG | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 21 | EAR99 | RoHS Compliant | 21 | AVALANCHE RATED | SP6 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 21 | 310W | 310W | 6 | Triple, Dual - Common Source | ISOLATED | N-CHANNEL | Standard | 70A | 1.7kV | 1.7kV | POWER CONTROL | SILICON | 4.4nF | 250μA | 450 ns | 2.4V @ 15V, 50A | 1050 ns | Trench Field Stop | No | 4.4nF @ 25V | 1700V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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F3L300R12MT4B22BOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | 2002 | EconoDUAL™ 3 | Active | 1 (Unlimited) | 11 | EAR99 | ROHS3 Compliant | UL APPROVED | Module | Chassis Mount | -40°C~150°C | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NO | R-XUFM-X11 | 1550W | 2 | Half Bridge Inverter | ISOLATED | N-CHANNEL | Standard | POWER CONTROL | SILICON | 1mA | 270 ns | 2.1V @ 15V, 300A | 600 ns | Trench Field Stop | Yes | 19nF @ 25V | 1200V | 450A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CM200DU-24H | Powerex Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Chassis Mount | 1999 | IGBTMOD™ | Obsolete | 1 (Unlimited) | 7 | EAR99 | RoHS Compliant | 7 | Module | Unknown | Chassis Mount | -40°C~150°C TJ | UPPER | UNSPECIFIED | Insulated Gate BIP Transistors | 1.13kW | 1130W | 2 | Half Bridge | ISOLATED | N-CHANNEL | 1.13kW | Standard | 200A | 1.2kV | 3.7V | MOTOR CONTROL | SILICON | 30nF | 1mA | 1.2kV | 200 ns | 3.7V @ 15V, 200A | 650 ns | No | 20V | 30nF @ 10V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APTGT50H170TG | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 36 Weeks | Chassis Mount, Screw | Bulk | 2006 | yes | Active | 1 (Unlimited) | 14 | EAR99 | RoHS Compliant | No | 4 | AVALANCHE RATED | SP4 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 14 | 312W | 312W | 4 | Full Bridge Inverter | ISOLATED | N-CHANNEL | Standard | 75A | 1.7kV | 2.4V | POWER CONTROL | SILICON | 4.4nF | 250μA | 450 ns | 2.4V @ 15V, 50A | 1100 ns | Trench Field Stop | Yes | 4.4nF @ 25V | 1700V | |||||||||||||||||||||||||||||||||||||||||||||||||||
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FF1000R17IE4PBOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Screw | 2007 | Active | 1 (Unlimited) | 12 | EAR99 | RoHS Compliant | 10 | UL APPROVED | Module | Chassis Mount | -40°C~150°C | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | R-PUFM-X12 | 1000000W | 2 | 2 Independent | ISOLATED | N-CHANNEL | Dual | Standard | 1.39kA | 1.7kV | POWER CONTROL | SILICON | 5mA | 720 ns | 2.45V @ 15V, 1000A | 1890 ns | Trench Field Stop | Yes | 81nF @ 25V | 1700V | 1000A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APTGF180H60G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount, Screw | 2012 | yes | Obsolete | 1 (Unlimited) | 12 | EAR99 | 150°C | -40°C | RoHS Compliant | Lead Free | 12 | SP6 | Chassis Mount | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 12 | Insulated Gate BIP Transistors | 833W | 4 | Full Bridge Inverter | ISOLATED | N-CHANNEL | Standard | 220A | 600V | 600V | MOTOR CONTROL | 8.6nF | 300μA | 51 ns | 2.5V @ 15V, 180A | 210 ns | NPT | No | 20V | 8.6nF @ 25V | 2.5 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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VS-GB200TS60NPBF | Vishay Semiconductor Diodes Division | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Chassis Mount, Screw | 2012 | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | INT-A-PAK (3 + 4) | Unknown | Chassis Mount | -40°C~150°C TJ | 781W | 781W | Half Bridge | NPN | Dual | Standard | 209A | 600V | 600V | 200μA | 2.6V | 2.84V @ 15V, 200A | NPT | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MWI150-12T8T | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Chassis Mount | 2008 | yes | Active | 1 (Unlimited) | 13 | ROHS3 Compliant | Lead Free | 3 | UL RECOGNIZED | E3 | Chassis Mount | -40°C~125°C TJ | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | MWI | 35 | Insulated Gate BIP Transistors | Not Qualified | 690W | 690W | 6 | Three Phase Inverter | ISOLATED | N-CHANNEL | Standard | 215A | 1.2kV | 2.1V | POWER CONTROL | SILICON | 10.77nF | 6mA | 320 ns | 2.1V @ 15V, 150A | 840 ns | Trench | Yes | 20V | 10.77nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||
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MUBW50-06A8 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 32 Weeks | Chassis Mount, Screw | Bulk | 2007 | yes | Active | 1 (Unlimited) | 20 | ROHS3 Compliant | 3 | UL RECOGNIZED | E3 | Chassis Mount | -40°C~125°C TJ | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | MUBW | 24 | R-XUFM-X20 | Insulated Gate BIP Transistors | Not Qualified | 250W | 250W | 7 | Three Phase Inverter with Brake | ISOLATED | N-CHANNEL | Three Phase Bridge Rectifier | 1.6kV | 75A | 600V | 2.3V | MOTOR CONTROL | SILICON | 2.8nF | 800μA | 110 ns | 2.3V @ 15V, 50A | 330 ns | NPT | Yes | 20V | 2.8nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||
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CM1400E3U-24NF | Powerex Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Screw | 2008 | IGBTMOD™ | yes | Obsolete | 1 (Unlimited) | 4 | EAR99 | RoHS Compliant | Lead Free | 6 | Module | -40°C~150°C TJ | UPPER | UNSPECIFIED | 9 | R-XUFM-X4 | 3.9kW | 3900W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 1.4kA | 1.2kV | 2.5V | POWER CONTROL | SILICON | 220nF | 1mA | 2.5V @ 15V, 1400A | No | 220nF @ 10V | 1200V | 1400A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CM100DY-24H | Powerex Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount | 1998 | IGBTMOD™ | Obsolete | 1 (Unlimited) | 7 | Non-RoHS Compliant | Module | Chassis Mount | -40°C~150°C TJ | UPPER | UNSPECIFIED | R-XUFM-X7 | Insulated Gate BIP Transistors | 780W | 780W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Standard | 100A | 1.2kV | 3.4V | MOTOR CONTROL | SILICON | 20nF | 1mA | 3.4V @ 15V, 100A | No | 20V | 20nF @ 10V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FF225R12ME4B11BPSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Bulk | 2002 | Active | Not Applicable | 11 | EAR99 | RoHS Compliant | Contains Lead | UL APPROVED | Module | Chassis Mount | -40°C~150°C | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NO | R-XUFM-X11 | 1050W | 2 | 2 Independent | ISOLATED | Not Halogen Free | N-CHANNEL | Dual | Standard | POWER CONTROL | SILICON | 3mA | 220 ns | 2.15V @ 15V, 225A | 600 ns | Trench Field Stop | Yes | 13nF @ 25V | 1200V | 320A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FF600R12ME4BOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 52 Weeks | Screw | 2002 | no | Not For New Designs | 1 (Unlimited) | 7 | EAR99 | RoHS Compliant | 11 | Module | Chassis Mount | -40°C~150°C | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 11 | R-XUFM-X7 | Insulated Gate BIP Transistors | Not Qualified | 4050W | 2 | 2 Independent | ISOLATED | N-CHANNEL | Dual | 4.05kW | Standard | 600A | 1.2kV | POWER CONTROL | SILICON | 3mA | 2.1V | 310 ns | 2.1V @ 15V, 600A | 770 ns | Trench Field Stop | Yes | 20V | 37nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||
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APTGTQ100H65T3G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 2012 | Active | RoHS Compliant | Module | Chassis Mount | -40°C~175°C TJ | 250W | Full Bridge | Standard | 100μA | 2.2V @ 15V, 100A | Yes | 6nF @ 25V | 650V | 100A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMS7G15US60 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount | Bulk | Obsolete | 1 (Unlimited) | RoHS Compliant | Lead Free | 15A | 25PM-AA | Chassis Mount | -40°C~150°C TJ | 600V | 73W | Three Phase Inverter with Brake | 73W | Three Phase Bridge Rectifier | 15A | 600V | 2.7V | 935pF | 250μA | 2.1V | 2.7V @ 15V, 15A | Yes | 0.935nF @ 30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXA220I650NA | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount | 2014 | Active | 1 (Unlimited) | ROHS3 Compliant | SOT-227-4, miniBLOC | Chassis Mount | -40°C~150°C TJ | 625W | Single | Standard | 225A | 650V | 100μA | PT | No | 225A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXGN50N60BD3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Chassis Mount, Screw | 2000 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 4 | RoHS Compliant | 4 | SOT-227-4, miniBLOC | Chassis Mount | 38.000013g | -40°C~150°C TJ | Nickel (Ni) | UPPER | UNSPECIFIED | IXG*50N60 | 4 | Insulated Gate BIP Transistors | 250W | 250W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 75A | 600V | 600V | POWER CONTROL | SILICON | 4.1nF | 200μA | 50 ns | 2.5V @ 15V, 50A | 200 ns | No | 20V | 4.1nF @ 25V | 2.5 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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FF200R12KT4HOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | 2002 | C | yes | Active | 1 (Unlimited) | 7 | EAR99 | ROHS3 Compliant | Lead Free | 7 | Module | Chassis Mount | -40°C~150°C TJ | UPPER | 7 | NO | 1100W | 2 | Half Bridge | NPN | ISOLATED | Not Halogen Free | Dual | Standard | 5mA | 680 ns | 2.15V @ 15V, 200A | 700 ns | Trench Field Stop | No | 14nF @ 25V | 1200V | 320A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GSID100A120T2P2 | SemiQ | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Amp+™ | Active | ROHS3 Compliant | Module | Chassis Mount | -40°C~150°C | 710W | Three Phase Inverter | Module | Three Phase Bridge Rectifier | 1mA | 2.1V @ 15V, 100A | Yes | 13.7nF @ 25V | 1200V | 200A |
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FP25R12W2T7B11BPSA1 Infineon Technologies AG
FP25R12W2T7B11BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available at Utmel
Price: 113.5398
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FF200R12KS4 Infineon Technologies
FF200R12KS4 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available at HK JDW
Price: 0.0000
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FF1000R17IE4PBOSA1 Infineon Technologies
FF1000R17IE4PBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
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VS-GB200TS60NPBF Vishay Semiconductor Diodes Division
IGBT Modules 209 Amp 600 Volt Half-Bridge
Price: 0.0000
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FF600R12ME4BOSA1 Infineon Technologies
FF600R12ME4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
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FF200R12KT4HOSA1 Infineon Technologies
Trans IGBT Module N-CH 1.2KV 320A 7-Pin 62MM
Price: 0.0000
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