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FCPF11N60NT
FCPF11N60NT
598-FCPF11N60NT
TO-220-3 Full Pack
FCPF11N60NT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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FCPF11N60NT Description
The FCPF11N60NT SuperMOS MOSFET is the next generation of high voltage super-junction (SJ) technology that employs a deep trench filling method that distinguishes it from traditional SJ MOSFETs. This innovative technology and perfect process control results in the lowest Rsp on-resistance, superior switching performance, and robustness.
FCPF11N60NT Features
100% Avalanche Tested
RoHS Compliant
32 Watt Power Dissipation
RDS(on) = 255 mΩ (Typ.) @ VGS = 10 V, ID = 5.4 A
Ultra Low Gate Charge (Typ. Qg = 27.4 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 130 pF)
FCPF11N60NT Applicaitons
PFC
Server/telecom power
FPD TV power
ATX power
Industrial power applications
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FCPF11N60NT
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