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FDB3502
FDB3502
598-FDB3502
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB3502 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
Purchasing and Inquiry
Description
The FDB3502 is a Power Trench? MOSFET with an N-Channel configuration. This N-Channel MOSFET is made with the innovative Power Trench? technology, which has been specifically optimized to reduce on-state resistance while maintaining exceptional switching performance. Electrons are used to build a current channel in an N-Channel MOSFET. When the MOSFET is active and switched on, electrons can move fast and readily via the current. The mobility of the carriers in N-Channel MOSFETs is approximately 2 to 3 times higher than in P-channel MOSFETs for the same RDS(on) value, thus the P-Channel chip must be 2 to 3 times the size of the N-Channel chip. As a result, MOSFET transistor N-Channels are frequently preferred for high current applications.
Features
● Max rDS(on) = 47mΩ at VGS = 10V, ID = 6A
● 100% UIL Tested
● RoHS Compliant
● Higher Performing
● Making Automotive Applications More Compact
Applications
● Synchronous Rectifier
● Consumer electronics
● MOS sensors
● Power MOSFETs
● Semiconductor memory
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FDB3502
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