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  • FDN336P

FDN336P

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Manufacturer No:

FDN336P

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FDN336P

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

FDN336P

Description:

FDN336P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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FDN336P Description


FDN336P is a type of P-channel specified PowerTrench? MOSFET provided by ON Semiconductor based on its advanced power trench process which makes this device capable of minimizing on-state resistance and maintaining a low gate charge. It can be widely used for portable electronics applications, including load switching, power management, DC-DC conversion, and more.



FDN336P Features


  • Extremely low RDS(ON)

  • High-performance trench technology

  • Low gate charge

  • Low on-state resistance

  • Available in the SuperSOT?-3 package



FDN336P Applications


  • Load switching

  • DC-DC conversion

  • Power management

  • Battery charging circuits


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FDN336P

technical specifications, attributes, parameters and parts with similar specifications to FDN336P.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    10 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 5 days ago)

  • Contact Plating

    Tin

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

  • Number of Pins

    3

  • Weight

    30mg

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2005

  • Series

    PowerTrench®

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • Termination

    SMD/SMT

  • ECCN Code

    EAR99

  • Resistance

    200mOhm

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    -20V

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Current Rating

    -1.3A

  • Number of Elements

    1

  • Power Dissipation-Max

    500mW Ta

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    500mW

  • Turn On Delay Time

    7 ns

  • FET Type

    P-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    200m Ω @ 1.3A, 4.5V

  • Vgs(th) (Max) @ Id

    1.5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    330pF @ 10V

  • Current - Continuous Drain (Id) @ 25°C

    1.3A Ta

  • Gate Charge (Qg) (Max) @ Vgs

    5nC @ 4.5V

  • Rise Time

    12ns

  • Drain to Source Voltage (Vdss)

    20V

  • Drive Voltage (Max Rds On,Min Rds On)

    2.5V 4.5V

  • Vgs (Max)

    ±8V

  • Fall Time (Typ)

    12 ns

  • Turn-Off Delay Time

    16 ns

  • Continuous Drain Current (ID)

    1.2A

  • Threshold Voltage

    -900mV

  • Gate to Source Voltage (Vgs)

    8V

  • Drain to Source Breakdown Voltage

    -20V

  • Dual Supply Voltage

    -20V

  • Nominal Vgs

    -900 mV

  • Height

    940μm

  • Length

    2.92mm

  • Width

    1.4mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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