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  • FQP34N20

FQP34N20

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Manufacturer No:

FQP34N20

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FQP34N20

Package:

TO-220-3

Datasheet:

FQP34N20

Description:

FQP34N20 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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Description


The FQP34N20 is a Power MOSFET, N-Channel, QFET?, 200 V, 31 A, 75 m|?, TO-220. On Semiconductor Semiconductor's exclusive planar stripe and DMOS technologies are used to create this N-Channel enhancement mode power MOSFET. This cutting-edge MOSFET technology has been specifically designed to lower on-state resistance while delivering excellent switching performance and great avalanche energy strength. Electronic light ballasts, active power factor correction (PFC), and switched mode power supply are all compatible with these products.



Features


  • 31A, 200V, RDS(on) = 75m|?(Max.) @VGS = 10 V, ID = 15.5A

  • Low gate charge ( Typ. 60nC)

  • Low Crss ( Typ. 55pF)

  • 100% avalanche tested

  • Maximum junction temperature (TJ(max))



Applications


  • Other Audio & Video

  • Small motor control

  • Switch Mode Power Supplies (SMPS)

  • Power-Over-Ethernet (PoE)

  • Solar inverters

  • Automotive applications


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The following are some common countries' logistic time.

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Shipping

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UPS(www.ups.com)
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From $40.00 basic shipping fee depend on zone and country.
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FQP34N20

technical specifications, attributes, parameters and parts with similar specifications to FQP34N20.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    5 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 2 days ago)

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3

  • Number of Pins

    3

  • Weight

    1.8g

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tube

  • Published

    2000

  • Series

    QFET®

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin (Sn)

  • Subcategory

    FET General Purpose Power

  • Voltage - Rated DC

    200V

  • Technology

    MOSFET (Metal Oxide)

  • Current Rating

    31A

  • Number of Elements

    1

  • Power Dissipation-Max

    180W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    180W

  • Turn On Delay Time

    40 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    75m Ω @ 15.5A, 10V

  • Vgs(th) (Max) @ Id

    5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    3100pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    31A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    78nC @ 10V

  • Rise Time

    280ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±30V

  • Fall Time (Typ)

    115 ns

  • Turn-Off Delay Time

    125 ns

  • Continuous Drain Current (ID)

    31A

  • Threshold Voltage

    5V

  • JEDEC-95 Code

    TO-220AB

  • Gate to Source Voltage (Vgs)

    30V

  • Drain-source On Resistance-Max

    0.075Ohm

  • Drain to Source Breakdown Voltage

    200V

  • Avalanche Energy Rating (Eas)

    640 mJ

  • Nominal Vgs

    5 V

  • Height

    9.4mm

  • Length

    10.1mm

  • Width

    4.7mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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