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FQU3N60CTU
FQU3N60CTU
598-FQU3N60CTU
TO-251-3 Short Leads, IPak, TO-251AA
MOSFET (Metal Oxide) N-Channel Tube 3.4 Ω @ 1.2A, 10V ±30V 565pF @ 25V 14nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
In Stock : 999
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Product Details
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FQU3N60CTU Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 565pF @ 25V.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2.4A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
FQU3N60CTU Features
a continuous drain current (ID) of 2.4A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 20 ns
a threshold voltage of 4V
FQU3N60CTU Applications
There are a lot of ON Semiconductor FQU3N60CTU applications of single MOSFETs transistors.
- Industrial Power Supplies
- LCD/LED TV
- Lighting, Server, Telecom and UPS.
- General Purpose Interfacing Switch
- Motor drives and Uninterruptible Power Supplies
- Battery Protection Circuit
- Motor Drives and Uninterruptible Power Supples
- Lighting
- Micro Solar Inverter
- Synchronous Rectification
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FQU3N60CTU
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