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  • IRG4PC60UPBF

IRG4PC60UPBF

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Manufacturer No:

IRG4PC60UPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRG4PC60UPBF

Package:

TO-247-3

Datasheet:

IRG4PC60UPBF

Description:

IRG4PC60UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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Description


The IRG4PC60UPBF is a 600V Ultrafast IGBT with a frequency range of 8 to 60kHz. The hard switching technique is designed to operate at a high frequency. The IGBT architecture of Generation 4 has a narrower parameter distribution and is more efficient. When utilized with the IR HEXFRED and IR Fred companion diodes, it gives the best results. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that has evolved to combine high efficiency and fast switching as it has been developed.



Features


  • Industry standard TO-247AC package

  • Lead-Free

  • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode

  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency

  • IGBT's optimized for specified application conditions

  • Designed for best performance when used with IR Hexfred & IR Fred companion diodes

  • Generation 4 IGBT's offer highest efficiency available



Applications


  • Power Management

  • Motor Drive & Control

  • AC and DC Motor Drives Offering Speed Control

  • Chopper and Inverters

  • Solar Inverters


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRG4PC60UPBF

technical specifications, attributes, parameters and parts with similar specifications to IRG4PC60UPBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    14 Weeks

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-247-3

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Bulk

  • Published

    2000

  • Part Status

    Last Time Buy

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Subcategory

    Insulated Gate BIP Transistors

  • Voltage - Rated DC

    600V

  • Max Power Dissipation

    520W

  • Peak Reflow Temperature (Cel)

    NOT SPECIFIED

  • Current Rating

    75A

  • Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

  • Qualification Status

    Not Qualified

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    520W

  • Case Connection

    COLLECTOR

  • Input Type

    Standard

  • Turn On Delay Time

    39 ns

  • Transistor Application

    POWER CONTROL

  • Rise Time

    42ns

  • Polarity/Channel Type

    N-CHANNEL

  • Turn-Off Delay Time

    200 ns

  • Collector Emitter Voltage (VCEO)

    2V

  • Max Collector Current

    75A

  • JEDEC-95 Code

    TO-247AC

  • Collector Emitter Breakdown Voltage

    600V

  • Collector Emitter Saturation Voltage

    2V

  • Turn On Time

    78 ns

  • Test Condition

    480V, 40A, 5 Ω, 15V

  • Vce(on) (Max) @ Vge, Ic

    2V @ 15V, 40A

  • Turn Off Time-Nom (toff)

    460 ns

  • Gate Charge

    310nC

  • Current - Collector Pulsed (Icm)

    300A

  • Td (on/off) @ 25°C

    39ns/200ns

  • Switching Energy

    280μJ (on), 1.1mJ (off)

  • Gate-Emitter Voltage-Max

    20V

  • Gate-Emitter Thr Voltage-Max

    6V

  • Height

    20.701mm

  • Length

    15.875mm

  • Width

    5.3086mm

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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