Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Power Dissipation-Max (Abs) | Element Configuration | Power Dissipation | Turn On Delay Time | Max Breakdown Voltage | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Rise Time-Max | Max Junction Temperature (Tj) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RGW00TK65DGVC11 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-3PFM, SC-93-3 | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 89W | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 95ns | POWER CONTROL | SILICON | 72 ns | 1.9V @ 15V, 50A | 273 ns | Trench Field Stop | 650V | 45A | 400V, 50A, 10 Ω, 15V | 141nC | 200A | 52ns/180ns | 1.18mJ (on), 960μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SGB15N60ATMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | no | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | Contains Lead | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | unknown | Surface Mount | -55°C~150°C TJ | Standard | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 139W | 139W | 1 | COLLECTOR | Halogen Free | N-CHANNEL | Single | 31A | 600V | 600V | POWER CONTROL | SILICON | 54 ns | 2.4V @ 15V, 15A | 315 ns | NPT | 400V, 15A, 21 Ω, 15V | 76nC | 62A | 32ns/234ns | 570μJ | ||||||||||||||||||||||||||||||||||||||||||
 |
IXGT24N60CD1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | 2000 | HiPerFAST™, Lightspeed™ | yes | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Surface Mount | 4.500005g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*24N60 | 3 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 150W | 150W | 1 | COLLECTOR | N-CHANNEL | Single | 25 ns | 48A | 600V | 600V | POWER CONTROL | SILICON | 15 ns | 2.5V @ 15V, 24A | 130 ns | 20V | 5.5V | 110ns | 480V, 24A, 10 Ω, 15V | 55nC | 80A | 15ns/75ns | 240μJ (off) | |||||||||||||||||||||||||||||||||||||||
 |
FGH40T65SHDF-F155 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2016 | yes | Active | 1 (Unlimited) | ROHS3 Compliant | Tin | 3 | TO-247-3 | Through Hole | 6.39g | -55°C~175°C TJ | Standard | Insulated Gate BIP Transistors | 268W | 268W | N-CHANNEL | Single | 101 ns | 80A | 650V | 650V | 1.45V | 1.81V @ 15V, 40A | Field Stop | 20V | 7.5V | 400V, 40A, 6 Ω, 15V | 68nC | 120A | 18ns/64ns | 1.22mJ (on), 440μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FGA30S120P | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 15 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2016 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.8mm | ROHS3 Compliant | 3 | TO-3P-3, SC-65-3 | 20.1mm | 5mm | Through Hole | 6.401g | -55°C~175°C TJ | Standard | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Insulated Gate BIP Transistors | 348W | 348W | 1 | N-CHANNEL | Single | 60A | 1.3kV | 1.3kV | 490ns | POWER CONTROL | SILICON | 2.3V | 2.3V @ 15V, 30A | Trench Field Stop | 25V | 1300V | 7.5V | 78nC | 150A | |||||||||||||||||||||||||||||||||||||||||
 |
IKU06N60RBKMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | 2013 | TrenchStop® | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | TO-251-3 Short Leads, IPak, TO-251AA | Through Hole | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSIP-T3 | 175°C | Insulated Gate BIP Transistors | Not Qualified | 100W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 100W | 68ns | POWER CONTROL | SILICON | 22 ns | 2.1V @ 15V, 6A | 335 ns | Trench | 20V | 600V | 12A | 5.7V | 400V, 6A, 23 Ω, 15V | 48nC | 18A | 12ns/127ns | 330μJ | ||||||||||||||||||||||||||||||||||||||||||||||
|
IRG4BC15UD-STRL | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | 2001 | Obsolete | 1 (Unlimited) | 2 | Non-RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | Standard | e3 | MATTE TIN | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | Not Qualified | 49W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 28ns | POWER CONTROL | SILICON | 37 ns | 2.4V @ 15V, 7.8A | 400 ns | 600V | 14A | 480V, 7.8A, 75 Ω, 15V | 23nC | 42A | 17ns/160ns | 240μJ (on), 260μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXXH30N60B3D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 270W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 270W | 25ns | 60A | 600V | 600V | POWER CONTROL | SILICON | 1.66V | 57 ns | 1.85V @ 15V, 24A | 292 ns | PT | 20V | 5.5V | 400V, 24A, 10 Ω, 15V | 39nC | 115A | 23ns/97ns | 550μJ (on), 500μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
|
IRG4BC30KDSTRRP | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2000 | Last Time Buy | 1 (Unlimited) | 2 | ROHS3 Compliant | No | 3 | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | IRG4BC30KD-SPBF | R-PSSO-G2 | Insulated Gate BIP Transistors | 100W | 100W | 1 | COLLECTOR | N-CHANNEL | Single | 42 ns | 28A | 600V | 2.7V | MOTOR CONTROL | SILICON | 100 ns | 2.7V @ 15V, 16A | 370 ns | 20V | 6V | 120ns | 480V, 16A, 23 Ω, 15V | 67nC | 56A | 60ns/160ns | 600μJ (on), 580μJ (off) | ||||||||||||||||||||||||||||||||||||||||
 |
FGH40T120SMD | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2013 | yes | Active | 1 (Unlimited) | EAR99 | 15.87mm | ROHS3 Compliant | 3 | TO-247-3 | not_compliant | 24.75mm | 4.82mm | Through Hole | 6.39g | -55°C~175°C TJ | Standard | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Insulated Gate BIP Transistors | 555W | N-CHANNEL | Single | 555W | 40 ns | 65 ns | 80A | 1.2kV | 1.2kV | 175°C | 475 ns | 1.8V | 2.4V @ 15V, 40A | Trench Field Stop | 25V | 1200V | 80A | 7.5V | 600V, 40A, 10 Ω, 15V | 370nC | 160A | 40ns/475ns | 2.7mJ (on), 1.1mJ (off) | |||||||||||||||||||||||||||||||||||||
 |
RJH65D27BDPQ-A0#T2 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tube | 2017 | Active | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | 175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 3 | 375W | 80ns | 1.65V @ 15V, 50A | Trench | 650V | 100A | 400V, 50A, 10 Ω, 15V | 175nC | 20ns/165ns | 1mJ (on), 1.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGC16N60B2D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2005 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 3 | UL RECOGNIZED | ISOPLUS220™ | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*16N60 | 3 | Not Qualified | 63W | 63W | 1 | ISOLATED | N-CHANNEL | Single | 110 ns | 28A | 600V | 600V | POWER CONTROL | SILICON | 2.3V | 43 ns | 2.3V @ 15V, 12A | 280 ns | PT | 400V, 12A, 22 Ω, 15V | 32nC | 100A | 25ns/70ns | 150mJ (off) | ||||||||||||||||||||||||||||||||||||||||||
 |
IHW25N120E1XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2016 | TrenchStop™ | yes | Active | Not Applicable | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~150°C TJ | Standard | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 231W | 231W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | 50A | 1.2kV | 2V | POWER CONTROL | SILICON | 2V @ 15V, 25A | 1677 ns | NPT and Trench | 1200V | 147nC | 75A | 800μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
RJH60F4DPK-00#T0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-3P-3, SC-65-3 | Through Hole | 150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | RJH60F | 4 | 235.8W | 235.8W | 140 ns | 60A | 600V | 1.82V | 1.82V @ 15V, 30A | Trench | 400V, 30A, 5 Ω, 15V | 45ns/85ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGX400N30A3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 24 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*400N30 | 3 | Insulated Gate BIP Transistors | Not Qualified | 1kW | 1000W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 400A | 300V | 1.15V | POWER CONTROL | SILICON | 100 ns | 1.15V @ 15V, 100A | 555 ns | PT | 20V | 5V | 560nC | 1200A | ||||||||||||||||||||||||||||||||||||||||||
|
IXGH15N120B2D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Through Hole | Tube | 2005 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*15N120 | 3 | Not Qualified | 192W | 192W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | COLLECTOR | N-CHANNEL | 165 ns | 30A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 43 ns | 3.3V @ 15V, 15A | 565 ns | 1200V | 960V, 15A, 10 Ω, 15V | 86nC | 60A | 25ns/165ns | 1.4mJ (off) | ||||||||||||||||||||||||||||||||||||||||||
 |
RGT40NL65DGTL | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Tape & Reel (TR) | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -40°C~175°C TJ | Standard | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 161W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 58ns | POWER CONTROL | SILICON | 51 ns | 2.1V @ 15V, 20A | 204 ns | Trench Field Stop | 650V | 40A | 400V, 20A, 10 Ω, 15V | 40nC | 60A | 22ns/75ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||
|
FGA20N120FTDTU | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | EAR99 | 15.8mm | ROHS3 Compliant | Lead Free | No | 3 | TO-3P-3, SC-65-3 | 18.9mm | 5mm | Through Hole | 6.401g | -55°C~150°C TJ | Standard | 8541.29.00.95 | e3 | Tin (Sn) | Insulated Gate BIP Transistors | 298W | 298W | N-CHANNEL | Single | 30 ns | 1.2kV | 447 ns | 40A | 1.2kV | 1.2kV | 143 ns | 2V @ 15V, 20A | Trench Field Stop | 25V | 1200V | 7.5V | 137nC | 60A | |||||||||||||||||||||||||||||||||||||||||||
 |
FGPF30N30TDTU | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | Standard | SINGLE | 3 | NO | R-PSFM-T3 | COMMERCIAL | 44.6W | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | N-CHANNEL | 22ns | POWER CONTROL | SILICON | 55 ns | 1.5V @ 15V, 10A | 400 ns | Trench | 300V | 200V, 20A, 20 Ω, 15V | 65nC | 80A | 22ns/130ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRGPC40FD2 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | 2017 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 160W | TO-247AC | 2V @ 15V, 27A | 600V | 49A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXBF12N300 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Through Hole | Tube | 2012 | BIMOSFET™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | i4-Pac™-5 (3 Leads) | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | Insulated Gate BIP Transistors | Not Qualified | 100W | 125W | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 1.4 μs | 22A | 3kV | 3.2V | POWER CONTROL | SILICON | 460 ns | 3.2V @ 15V, 12A | 705 ns | 20V | 3000V | 26A | 5V | 62nC | 98A | ||||||||||||||||||||||||||||||||||||||||
|
RGCL80TK60GC11 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-3PFM, SC-93-3 | not_compliant | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 57W | 1 | SINGLE | ISOLATED | N-CHANNEL | POWER CONTROL | SILICON | 114 ns | 1.8V @ 15V, 40A | 565 ns | Trench Field Stop | 600V | 35A | 400V, 40A, 10 Ω, 15V | 98nC | 160A | 53ns/227ns | 1.11mJ (on), 1.68mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXGT32N120A3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | Surface Mount | Tube | 2011 | GenX3™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | unknown | Surface Mount | -55°C~150°C TJ | Standard | e3 | PURE TIN | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 300W | 1 | COLLECTOR | N-CHANNEL | Single | 300W | 75A | 1.2kV | 2.35V | POWER CONTROL | SILICON | 1.2kV | 239 ns | 2.35V @ 15V, 32A | 1380 ns | PT | 20V | 1200V | 5V | 89nC | 230A | |||||||||||||||||||||||||||||||||||||||||
 |
SKW20N60FKSA1 | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 179W | PG-TO247-3 | 300ns | 2.4V @ 15V, 20A | NPT | 600V | 40A | 400V, 20A, 16Ohm, 15V | 100nC | 80A | 36ns/225ns | 440μJ (on), 330μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IHW25N120R2FKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2008 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 365W | 1 | TO-247AC | COLLECTOR | N-CHANNEL | Single | 50A | 1.2kV | POWER CONTROL | SILICON | 1.8V @ 15V, 25A | 463.6 ns | NPT | 1200V | 600V, 25A, 10 Ω, 15V | 60.7nC | 75A | -/324ns | 1.59mJ | ||||||||||||||||||||||||||||||||||||||||||||||
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IXBT24N170 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 24 Weeks | Surface Mount | Tube | 2013 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 250W | 250W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 1.06 μs | 60A | 1.7kV | 2.5V | POWER CONTROL | SILICON | 190 ns | 2.5V @ 15V, 24A | 1285 ns | 20V | 1700V | 5V | 140nC | 230A | ||||||||||||||||||||||||||||||||||||||||
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IXGH48N60A3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*48N60 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 300W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 300W | 120A | 600V | 600V | POWER CONTROL | SILICON | 1.18V | 54 ns | 1.35V @ 15V, 32A | 925 ns | PT | 20V | 5V | 480V, 32A, 5 Ω, 15V | 110nC | 300A | 25ns/334ns | 950μJ (on), 2.9mJ (off) | ||||||||||||||||||||||||||||||||||||
 |
IRG4BC20FPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 1997 | Obsolete | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.5156mm | RoHS Compliant | Contains Lead, Lead Free | 16A | No | 3 | FAST SWITCHING | TO-220-3 | No SVHC | 15.24mm | 4.69mm | Through Hole | -55°C~150°C TJ | 600V | Standard | SINGLE | Insulated Gate BIP Transistors | 60W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Dual | 60W | 24 ns | 16A | 600V | 2V | POWER CONTROL | 190 ns | SILICON | 17ns | 1.66V | 41 ns | 2V @ 15V, 9A | 640 ns | 20V | 6V | 480V, 9A, 50 Ω, 15V | 27nC | 64A | 24ns/190ns | 70μJ (on), 600μJ (off) | ||||||||||||||||||||||||||||||||||
|
NGTB30N60FLWG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | LAST SHIPMENTS (Last Updated: 20 hours ago) | Tube | 2012 | yes | Obsolete | 1 (Unlimited) | EAR99 | 16.25mm | RoHS Compliant | Lead Free | 3 | TO-247-3 | No SVHC | 21.4mm | 5.3mm | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | Insulated Gate BIP Transistors | 250W | 250W | Halogen Free | N-CHANNEL | Single | 72 ns | 60A | 600V | 600V | 1.65V | 1.9V @ 15V, 30A | Trench Field Stop | 20V | 6.5V | 400V, 30A, 10 Ω, 15V | 170nC | 120A | 83ns/170ns | 700μJ (on), 280μJ (off) | |||||||||||||||||||||||||||||||||||||||||
 |
APT70GR65B2SCD30 | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 22 Weeks | Through Hole | Bulk | 2001 | Obsolete | 1 (Unlimited) | RoHS Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | 595W | 595W | T-MAX™ [B2] | 134A | 650V | 2.4V | 2.4V @ 15V, 70A | NPT | 650V | 134A | 433V, 70A, 4.3Ohm, 15V | 305nC | 260A | 19ns/170ns |
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SGB15N60ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Utmel
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IHW25N120R2FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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IRG4BC20FPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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